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Technique for producing highly planar Si/SiO0.64Ge0.36/Si metal–oxide–semiconductor field effect transistor channels

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Grasby, T. J., Parry, C. P., Phillips, P. J. (Peter J.), McGregor, Barry M., Morris, R. J. H. (Richard J. H.), Braithwaite, Glyn, Whall, Terry E., Parker, Evan H. C., Hammond, Richard, Knights, Andrew P. and Coleman, P. G.. (1999) Technique for producing highly planar Si/SiO0.64Ge0.36/Si metal–oxide–semiconductor field effect transistor channels. Applied Physics Letters, Vol.74 (No.13). pp. 1848-1850. ISSN 0003-6951

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Official URL: http://dx.doi.org/10.1063/1.123689

Abstract

Si/Si0.64Ge0.36/Si heterostructures have been grown at low temperature (450 °C) to avoid the strain-induced roughening observed for growth temperatures of 550 °C and above. The electrical properties of these structures are poor, and thought to be associated with grown-in point defects as indicated in positron annihilation spectroscopy. However, after an in situ annealing procedure (800 °C for 30 min) the electrical properties dramatically improve, giving an optimum 4 K mobility of 2500 cm2 V – 1 s – 1 for a sheet density of 6.2 × 1011 cm – 2. The low temperature growth yields highly planar interfaces, which are maintained after anneal as evidenced from transmission electron microscopy. This and secondary ion mass spectroscopy measurements demonstrate that the metastably strained alloy layer can endure the in situ anneal procedure necessary for enhanced electrical properties. Further studies have shown that the layers can also withstand a 120 min thermal oxidation at 800 °C, commensurate with metal–oxide–semiconductor device fabrication.

Item Type:

Journal Article

Subjects:

T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics

Divisions:

Faculty of Science > Physics

Library of Congress Subject Headings (LCSH):

Germanium alloys, Silicon alloys, Semiconductors -- Junctions, Metal oxide semiconductor field-effect transistors, Positron annihilation, Annealing of metals, Electron mobility

Journal or Publication Title:

Applied Physics Letters

Publisher:

American Institute of Physics

ISSN:

0003-6951

Official Date:

29 March 1999

Dates:

Date	Event
29 March 1999	Published

Volume:

Vol.74

Number:

No.13

Page Range:

pp. 1848-1850

Identification Number:

10.1063/1.123689

Status:

Peer Reviewed

Access rights to Published version:

Open Access

Funder:

Engineering and Physical Sciences Research Council (EPSRC), Mitel (Firm)

References:

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URI:

http://wrap.warwick.ac.uk/id/eprint/1000

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