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Temperature-dependent Hall scattering factor and drift mobility in remotely doped Si:B/SiGe/Si heterostructures
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McGregor, Barry M., Lander, Robert James Pascoe, Phillips, P. J. (Peter J.), Parker, Evan H. C. and Whall, Terry E. (1999) Temperature-dependent Hall scattering factor and drift mobility in remotely doped Si:B/SiGe/Si heterostructures. Applied Physics Letters, Vol.74 (No.9). pp. 1245-1247. doi:10.1063/1.123513 ISSN 0003-6951.
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Official URL: http://dx.doi.org/10.1063/1.123513
Abstract
Hall-and-Strip measurements on modulation-doped SiGe heterostructures and combined Hall and capacitance–voltage measurements on metal-oxide-semiconductor (MOS)-gated enhancement mode structures have been used to deduce Hall scattering factors, rH, in the Si1 – xGex two-dimensional hole gas. At 300 K, rH was found to be equal to 0.4 for x = 0.2 and x = 0.3. Knowing rH, it is possible to calculate the 300 K drift mobilities in the modulation-doped structures which are found to be 400 cm2 V – 1 s – 1 at a carrier density of 3.3 × 1011 cm – 2 for x = 0.2 and 300 cm2 V – 1 s – 1 at 6.3 × 1011 cm – 2 for x = 0.3, factors of between 1.5 and 2.0 greater than a Si pMOS control.
Item Type: | Journal Article | ||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Library of Congress Subject Headings (LCSH): | Silicon alloys, Germanium alloys, Boron compounds, Semiconductors -- Junctions, Hall effect, Electron mobility | ||||
Journal or Publication Title: | Applied Physics Letters | ||||
Publisher: | American Institute of Physics | ||||
ISSN: | 0003-6951 | ||||
Official Date: | 1 March 1999 | ||||
Dates: |
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Volume: | Vol.74 | ||||
Number: | No.9 | ||||
Page Range: | pp. 1245-1247 | ||||
DOI: | 10.1063/1.123513 | ||||
Status: | Peer Reviewed | ||||
Access rights to Published version: | Open Access (Creative Commons) | ||||
Funder: | Engineering and Physical Sciences Research Council (EPSRC) |
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