McGregor, Barry M., Lander, Robert James Pascoe, Phillips, P. J. (Peter J.), Parker, Evan H. C. and Whall, Terry E.. (1999) Temperature-dependent Hall scattering factor and drift mobility in remotely doped Si:B/SiGe/Si heterostructures. Applied Physics Letters, Vol.74 (No.9). pp. 1245-1247. ISSN 0003-6951

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Abstract

Hall-and-Strip measurements on modulation-doped SiGe heterostructures and combined Hall and capacitance–voltage measurements on metal-oxide-semiconductor (MOS)-gated enhancement mode structures have been used to deduce Hall scattering factors, rH, in the Si1 – xGex two-dimensional hole gas. At 300 K, rH was found to be equal to 0.4 for x = 0.2 and x = 0.3. Knowing rH, it is possible to calculate the 300 K drift mobilities in the modulation-doped structures which are found to be 400 cm2 V – 1 s – 1 at a carrier density of 3.3 × 1011 cm – 2 for x = 0.2 and 300 cm2 V – 1 s – 1 at 6.3 × 1011 cm – 2 for x = 0.3, factors of between 1.5 and 2.0 greater than a Si pMOS control.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics
Divisions:	Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Silicon alloys, Germanium alloys, Boron compounds, Semiconductors -- Junctions, Hall effect, Electron mobility
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Date:	1 March 1999
Volume:	Vol.74
Number:	No.9
Page Range:	pp. 1245-1247
Identification Number:	10.1063/1.123513
Status:	Peer Reviewed
Access rights to Published version:	Open Access
Funder:	Engineering and Physical Sciences Research Council (EPSRC)
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URI:	http://wrap.warwick.ac.uk/id/eprint/1001

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