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Depth profile and lattice location analysis of Sb atoms in Si/Sb(-doped)/Si(001) structures using medium-energy ion scattering spectroscopy
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Kobayashi, T., McConville, C. F. (Chris F.), Dorenbos, G., Iwaki, M. and Aono, M. (1999) Depth profile and lattice location analysis of Sb atoms in Si/Sb(-doped)/Si(001) structures using medium-energy ion scattering spectroscopy. Applied Physics Letters, Vol.74 (No.5). pp. 673-675. doi:10.1063/1.122983 ISSN 0003-6951.
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Official URL: http://dx.doi.org/10.1063/1.122983
Abstract
Medium-energy coaxial impact-collision ion scattering spectroscopy has been used to study the depth profile and lattice location of Sb atoms in Si/Sb(delta-doped)/Si(001) structures prepared by solid phase epitaxy. The Sb atoms are observed to diffuse into the Si capping layer at concentrations much higher than the solubility limit in a Si crystal. In addition, the concentration of diffused Sb atoms does not show a monotonic decrease with increasing distance from the delta-layer plane. The lattice locations of the diffused Sb atoms are found to be strongly dependent on the distance from the location of the original Sb delta layer.
Item Type: | Journal Article | ||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Library of Congress Subject Headings (LCSH): | Silicon compounds, Semiconductors -- Junctions, Antimony, Annealing of metals | ||||
Journal or Publication Title: | Applied Physics Letters | ||||
Publisher: | American Institute of Physics | ||||
ISSN: | 0003-6951 | ||||
Official Date: | 1 February 1999 | ||||
Dates: |
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Volume: | Vol.74 | ||||
Number: | No.5 | ||||
Page Range: | pp. 673-675 | ||||
DOI: | 10.1063/1.122983 | ||||
Status: | Peer Reviewed | ||||
Access rights to Published version: | Open Access (Creative Commons) |
Data sourced from Thomson Reuters' Web of Knowledge
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