Kobayashi, T., McConville, C. F. (Chris F.), Dorenbos, G., Iwaki, M. and Aono, M. (1999) Depth profile and lattice location analysis of Sb atoms in Si/Sb(-doped)/Si(001) structures using medium-energy ion scattering spectroscopy. Applied Physics Letters, Vol.74 (No.5). pp. 673-675. doi:10.1063/1.122983

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Abstract

Medium-energy coaxial impact-collision ion scattering spectroscopy has been used to study the depth profile and lattice location of Sb atoms in Si/Sb(delta-doped)/Si(001) structures prepared by solid phase epitaxy. The Sb atoms are observed to diffuse into the Si capping layer at concentrations much higher than the solubility limit in a Si crystal. In addition, the concentration of diffused Sb atoms does not show a monotonic decrease with increasing distance from the delta-layer plane. The lattice locations of the diffused Sb atoms are found to be strongly dependent on the distance from the location of the original Sb delta layer.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics
Divisions:	Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Silicon compounds, Semiconductors -- Junctions, Antimony, Annealing of metals
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Official Date:	1 February 1999
Dates:	Date Event 1 February 1999 Published
Volume:	Vol.74
Number:	No.5
Page Range:	pp. 673-675
DOI:	10.1063/1.122983
Status:	Peer Reviewed
Access rights to Published version:	Open Access

Data sourced from Thomson Reuters' Web of Knowledge

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