The Library
Design and optimisation of a high-temperature silicon micro-hotplate for nanoporous palladium pellistors
Tools
Tools
Tools
Lee, S. M., Dyer, D. C. and Gardner, J. W.. (2003) Design and optimisation of a high-temperature silicon micro-hotplate for nanoporous palladium pellistors. Microelectronics Journal, 34 (2). pp. 115-126. ISSN 0026-2692
Full text not available from this repository.
Official URL: http://dx.doi.org/10.1016/S0026-2692(02)00153-2
Abstract
The conventional design of the heater in a silicon micro-hotplate employ a simple meandering resistive track to form a square element. We show that this heater structure produces an uneven thermal profile characterised by a central hot spot with a significant variation in temperature of some 50degreesC across the plate at an average temperature of 500degreesC. Four novel micro-heater designs are reported here and fabricated on hotplates with an active area that ranges from (200 X 200) muM(2) to (570 X 570) muM(2) in order to vary systematically the ratio of membrane to heater length from a value of 5.0-2.7, respectively. All the designs have been simulated using a 3D electro-thermo-mechanical finite element model and results agree well with thermal profiles taken using an infrared microscope. One of the designs, referred to here as 'drive-wheel' structure, performs best and reduces the lateral variation in temperature to only +/-10degreesC. The different resistive micro-heaters have been calibrated with the lowest power consumption being 50 mW at 500degreesC, which is well below the power consumption of any commercial pellistor; the maximum temperature before rupture being 870degreesC. The micro-hotplates were electrochemically coated with a 20 nm thick mesoporous palladium catalyst and the pellistors' response tested to 2.5% methane in air. The micro-heaters were observed to be stable for a period of 1000 h and should provide a good platform for exploitation in commercial catalytic pellistors. (C) 2002 Elsevier Science Ltd. All rights reserved.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology |
||||
| Divisions: | Faculty of Science > Engineering | ||||
| Journal or Publication Title: | Microelectronics Journal | ||||
| Publisher: | Elsevier Science BV | ||||
| ISSN: | 0026-2692 | ||||
| Official Date: | February 2003 | ||||
| Dates: |
|
||||
| Volume: | 34 | ||||
| Number: | 2 | ||||
| Number of Pages: | 12 | ||||
| Page Range: | pp. 115-126 | ||||
| Identification Number: | 10.1016/S0026-2692(02)00153-2 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Access rights to Published version: | Restricted or Subscription Access | ||||
| URI: | http://wrap.warwick.ac.uk/id/eprint/10077 |
Data sourced from Thomson Reuters' Web of Knowledge
Request changes or add full text files to a record
Actions (login required)
 |
View Item |
