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Stable defects in semiconductor nanowires
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Sánchez, Ana M., Gott, James A., Fonseka, H. Aruni, Zhang, Yunyan, Liu, Huiyun and Beanland, R. (2018) Stable defects in semiconductor nanowires. Nano Letters, 18 (5). pp. 3081-3087. doi:10.1021/acs.nanolett.8b00620
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WRAP-stable-defects-semiconductor-nanowires-Sanchez-Beanland-2018.pdf - Accepted Version - Requires a PDF viewer. Download (3012Kb) | Preview |
Official URL: https://doi.org/10.1021/acs.nanolett.8b00620
Abstract
Semiconductor nanowires are commonly described as being defect-free due to their ability to expel mobile defects with long-range strain fields. Here, we describe previously undiscovered topologically protected line defects with null Burgers vector that, unlike dislocations, are stable in nanoscale crystals. We analyze the defects present in semiconductor nanowires in regions of imperfect crystal growth, i.e., at the nanowire tip formed during consumption of the droplet in self-catalyzed vapor–liquid–solid growth and subsequent vapor–solid shell growth. We use a form of the Burgers circuit method that can be applied to multiply twinned material without difficulty. Our observations show that the nanowire microstructure is very different from bulk material, with line defects either (a) trapped by locks or other defects, (b) arranged as dipoles or groups with a zero total Burgers vector, or (c) have a zero Burgers vector. We find two new line defects with a null Burgers vector, formed from the combination of partial dislocations in twinned material. The most common defect is the three-monolayer high twin facet with a zero Burgers vector. Studies of individual nanowires using cathodoluminescence show that optical emission is quenched in defective regions, showing that they act as strong nonradiative recombination centers.
| Item Type: | Journal Article | ||||||||||||
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| Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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| Divisions: | Faculty of Science > Physics | ||||||||||||
| Library of Congress Subject Headings (LCSH): | Semiconductors, Nanowires | ||||||||||||
| Journal or Publication Title: | Nano Letters | ||||||||||||
| Publisher: | American Chemical Society | ||||||||||||
| ISSN: | 1530-6992 | ||||||||||||
| Official Date: | 9 May 2018 | ||||||||||||
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| Date of first compliant deposit: | 23 May 2018 | ||||||||||||
| Volume: | 18 | ||||||||||||
| Number: | 5 | ||||||||||||
| Page Range: | pp. 3081-3087 | ||||||||||||
| DOI: | 10.1021/acs.nanolett.8b00620 | ||||||||||||
| Status: | Peer Reviewed | ||||||||||||
| Publication Status: | Published | ||||||||||||
| Access rights to Published version: | Restricted or Subscription Access | ||||||||||||
| RIOXX Funder/Project Grant: |
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