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Stable defects in semiconductor nanowires

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Sánchez, Ana M., Gott, James A., Fonseka, H. Aruni, Zhang, Yunyan, Liu, Huiyun and Beanland, R. (2018) Stable defects in semiconductor nanowires. Nano Letters, 18 (5). pp. 3081-3087. doi:10.1021/acs.nanolett.8b00620 ISSN 1530-6992.

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Official URL: https://doi.org/10.1021/acs.nanolett.8b00620

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Abstract

Semiconductor nanowires are commonly described as being defect-free due to their ability to expel mobile defects with long-range strain fields. Here, we describe previously undiscovered topologically protected line defects with null Burgers vector that, unlike dislocations, are stable in nanoscale crystals. We analyze the defects present in semiconductor nanowires in regions of imperfect crystal growth, i.e., at the nanowire tip formed during consumption of the droplet in self-catalyzed vapor–liquid–solid growth and subsequent vapor–solid shell growth. We use a form of the Burgers circuit method that can be applied to multiply twinned material without difficulty. Our observations show that the nanowire microstructure is very different from bulk material, with line defects either (a) trapped by locks or other defects, (b) arranged as dipoles or groups with a zero total Burgers vector, or (c) have a zero Burgers vector. We find two new line defects with a null Burgers vector, formed from the combination of partial dislocations in twinned material. The most common defect is the three-monolayer high twin facet with a zero Burgers vector. Studies of individual nanowires using cathodoluminescence show that optical emission is quenched in defective regions, showing that they act as strong nonradiative recombination centers.

Item Type: Journal Article
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science, Engineering and Medicine > Science > Physics
Library of Congress Subject Headings (LCSH): Semiconductors, Nanowires
Journal or Publication Title: Nano Letters
Publisher: American Chemical Society
ISSN: 1530-6992
Official Date: 9 May 2018
Dates:
DateEvent
9 May 2018Published
6 April 2018Available
6 April 2018Accepted
Volume: 18
Number: 5
Page Range: pp. 3081-3087
DOI: 10.1021/acs.nanolett.8b00620
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Date of first compliant deposit: 23 May 2018
Date of first compliant Open Access: 6 April 2019
RIOXX Funder/Project Grant:
Project/Grant IDRIOXX Funder NameFunder ID
EP/P000916/1[EPSRC] Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266
EP/P000886/1[EPSRC] Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266
EP/N509796/1[EPSRC] Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266
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