Determination of the variation in sputter yield in the SIMS transient region using MEIS
UNSPECIFIED (2003) Determination of the variation in sputter yield in the SIMS transient region using MEIS. In: 13th International Conference on Secondary Ion Mass Spectrometry and Related Topics (SIMS XIII), NARA, JAPAN, NOV 11-16, 2001. Published in: Surface Science, 203 pp. 363-366.Full text not available from this repository.
The near-surface erosion rate in SIMS depth profiling is significantly different from that in the bulk, and varies with primary ion dose across the transient region in a currently unknown manner. Here, we describe a new method using medium energy ion scattering to measure the transient matrix sputter yield, and hence determine the erosion rate. We demonstrate its use in converting the raw dose and yield scales in a shallow depth profile to depth and concentration. We show that the surface erosion rate may be more than 10 times that in the bulk, and that the ion yield for boron in silicon apparently stabilizes before the sputter yield. (C) 2002 Elsevier Science B.V. All rights reserved.
|Item Type:||Conference Item (UNSPECIFIED)|
|Subjects:||Q Science > QD Chemistry
T Technology > TA Engineering (General). Civil engineering (General)
Q Science > QC Physics
|Journal or Publication Title:||Surface Science|
|Publisher:||ELSEVIER SCIENCE BV|
|Official Date:||15 January 2003|
|Number of Pages:||4|
|Page Range:||pp. 363-366|
|Title of Event:||13th International Conference on Secondary Ion Mass Spectrometry and Related Topics (SIMS XIII)|
|Location of Event:||NARA, JAPAN|
|Date(s) of Event:||NOV 11-16, 2001|
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