UNSPECIFIED (2003) The effect of Se and Zn pre-deposition on thermal diffusion of elements across the ZnSe/GaAs interface studied by SIMS. In: 13th International Conference on Secondary Ion Mass Spectrometry and Related Topics (SIMS XIII), NOV 11-16, 2001, NARA, JAPAN.

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Abstract

ZnSe samples were grown on Zn and Se pre-deposited GaAs substrates. Thermal diffusion of elements across the ZnSe/GaAs interface was investigated, using secondary ion mass spectroscopy (SIMS). Diffusion of Ga atoms across the interface was observed for Zn pre-treated substrates, whereas Se pre-treatment of the GaAs substrate prevents thermal diffusion of Ga across the interface. This effect believed to be due to formation of GaAsxSey "barrier layers" at the ZnSe/GaAs interface. The Ga diffusion coefficients at annealing temperatures of 400, 500 and 600 degreesC were found to be 2.1 x 10(-16), 1.9 x 10(-15), and 2.2 x 10(-14) cm(2)/s, respectively. The thermal diffusion of other elements across the interface was not observed within the depth resolution limit of SIMS analysis. (C) 2002 Elsevier Science B.V. All rights reserved.

Item Type:	Conference Item (UNSPECIFIED)
Subjects:	Q Science > QD Chemistry T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics
Journal or Publication Title:	Surface Science
Publisher:	ELSEVIER SCIENCE BV
ISSN:	0169-4332
Date:	15 January 2003
Volume:	203
Number of Pages:	5
Page Range:	pp. 490-494
Publication Status:	Published
Title of Event:	13th International Conference on Secondary Ion Mass Spectrometry and Related Topics (SIMS XIII)
Location of Event:	NARA, JAPAN
Date(s) of Event:	NOV 11-16, 2001
URI:	http://wrap.warwick.ac.uk/id/eprint/10114

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