The effect of Se and Zn pre-deposition on thermal diffusion of elements across the ZnSe/GaAs interface studied by SIMS
UNSPECIFIED (2003) The effect of Se and Zn pre-deposition on thermal diffusion of elements across the ZnSe/GaAs interface studied by SIMS. In: 13th International Conference on Secondary Ion Mass Spectrometry and Related Topics (SIMS XIII), NARA, JAPAN, NOV 11-16, 2001. Published in: Surface Science, 203 pp. 490-494.Full text not available from this repository.
ZnSe samples were grown on Zn and Se pre-deposited GaAs substrates. Thermal diffusion of elements across the ZnSe/GaAs interface was investigated, using secondary ion mass spectroscopy (SIMS). Diffusion of Ga atoms across the interface was observed for Zn pre-treated substrates, whereas Se pre-treatment of the GaAs substrate prevents thermal diffusion of Ga across the interface. This effect believed to be due to formation of GaAsxSey "barrier layers" at the ZnSe/GaAs interface. The Ga diffusion coefficients at annealing temperatures of 400, 500 and 600 degreesC were found to be 2.1 x 10(-16), 1.9 x 10(-15), and 2.2 x 10(-14) cm(2)/s, respectively. The thermal diffusion of other elements across the interface was not observed within the depth resolution limit of SIMS analysis. (C) 2002 Elsevier Science B.V. All rights reserved.
|Item Type:||Conference Item (UNSPECIFIED)|
|Subjects:||Q Science > QD Chemistry
T Technology > TA Engineering (General). Civil engineering (General)
Q Science > QC Physics
|Journal or Publication Title:||Surface Science|
|Publisher:||ELSEVIER SCIENCE BV|
|Official Date:||15 January 2003|
|Number of Pages:||5|
|Page Range:||pp. 490-494|
|Title of Event:||13th International Conference on Secondary Ion Mass Spectrometry and Related Topics (SIMS XIII)|
|Location of Event:||NARA, JAPAN|
|Date(s) of Event:||NOV 11-16, 2001|
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