UNSPECIFIED (2003) Charge compensation using optical conductivity enhancement and simple analytical protocols for SIMS of resistive Si1-xGex alloy layers. In: 13th International Conference on Secondary Ion Mass Spectrometry and Related Topics (SIMS XIII), NOV 11-16, 2001, NARA, JAPAN.

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Abstract

In this paper we demonstrate the use of red laser illumination to stimulate charge carriers in semiconductor layers with very low residual carrier densities, to eliminate surface potential changes during SIMS depth profiling. We show that very simple quantification protocols can be used for Ge assay, at least up to Ge fractions of 30%. (C) 2002 Elsevier Science B.V. All rights reserved.

Item Type:	Conference Item (UNSPECIFIED)
Subjects:	Q Science > QD Chemistry T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics
Journal or Publication Title:	Surface Science
Publisher:	ELSEVIER SCIENCE BV
ISSN:	0169-4332
Date:	15 January 2003
Volume:	203
Number of Pages:	4
Page Range:	pp. 500-503
Publication Status:	Published
Title of Event:	13th International Conference on Secondary Ion Mass Spectrometry and Related Topics (SIMS XIII)
Location of Event:	NARA, JAPAN
Date(s) of Event:	NOV 11-16, 2001
URI:	http://wrap.warwick.ac.uk/id/eprint/10115

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