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The effect of Ge precursor on the heteroepitaxy of Ge1−x Sn x epilayers on a Si (001) substrate
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Jahandar, P., Weisshaupt, David, Colston, Gerard B., Allred, Phil, Schulze, Jorg and Myronov, Maksym (2018) The effect of Ge precursor on the heteroepitaxy of Ge1−x Sn x epilayers on a Si (001) substrate. Semiconductor Science and Technology, 33 (3). 034003. doi:10.1088/1361-6641/aa9e7e ISSN 0268-1242.
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Official URL: http://dx.doi.org/10.1088/1361-6641/aa9e7e
Abstract
The heteroepitaxial growth of Ge1−x Sn x on a Si (001) substrate, via a relaxed Ge buffer, has been studied using two commonly available commercial Ge precursors, Germane (GeH4) and Digermane (Ge2H6), by means of chemical vapour deposition at reduced pressures (RP-CVD). Both precursors demonstrate growth of strained and relaxed Ge1−x Sn x epilayers, however Sn incorporation is significantly higher when using the more reactive Ge2H6 precursor. As Ge2H6 is significantly more expensive, difficult to handle or store than GeH4, developing high Sn content epilayers using the latter precursor is of great interest. This study demonstrates the key differences between the two precursors and offers routes to process optimisation which will enable high Sn content alloys at relatively low cost.
Item Type: | Journal Article | ||||||||
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||||||
Journal or Publication Title: | Semiconductor Science and Technology | ||||||||
Publisher: | Institute of Physics Publishing Ltd. | ||||||||
ISSN: | 0268-1242 | ||||||||
Official Date: | 23 February 2018 | ||||||||
Dates: |
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Volume: | 33 | ||||||||
Number: | 3 | ||||||||
Article Number: | 034003 | ||||||||
DOI: | 10.1088/1361-6641/aa9e7e | ||||||||
Status: | Peer Reviewed | ||||||||
Publication Status: | Published | ||||||||
Access rights to Published version: | Restricted or Subscription Access |
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