Passivation and reconstruction-dependent electron accumulation at sulphur treated InAs(001) surfaces
UNSPECIFIED. (2003) Passivation and reconstruction-dependent electron accumulation at sulphur treated InAs(001) surfaces. Surface Science, 523 (1-2). pp. 179-188. ISSN 0039-6028Full text not available from this repository.
The effects of in situ sulphur passivation on the electronic properties of n-type InAs(0 0 1) have been studied using X-ray photoemission spectroscopy and high resolution electron energy loss spectroscopy coupled with space-charge layer calculations. Surfaces passivated by sulphur dosing followed by arsenic capping were annealed in vacuum to progressively remove the protective layers. For disordered surfaces with a sulphur coverage of almost 2 monolayers (ML), complex surface plasmon modes were observed due to strong electron accumulation at the surface, with downward band bending around 600 meV. For (2 x 1) reconstructed surfaces (sulphur coverage <1 ML), the band bending dropped to 325 meV. A 375 degreesC anneal was sufficient to remove all sulphur and regain a clean (4 x 1) indium-terminated surface with 200 meV downward band bending. We discuss the reconstruction-dependent surface accumulation and some aspects of 'electrical passivation' of surfaces. (C) 2002 Elsevier Science B.V. All rights reserved.
|Item Type:||Journal Article|
|Subjects:||Q Science > QD Chemistry
Q Science > QC Physics
|Journal or Publication Title:||Surface Science|
|Publisher:||ELSEVIER SCIENCE BV|
|Official Date:||10 January 2003|
|Number of Pages:||10|
|Page Range:||pp. 179-188|
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