Sadeghzadeh, Mohammad Ali, Parry, C. P., Phillips, P. J. (Peter J.), Parker, Evan H. C. and Whall, Terry E. (1999) Issues on the molecular-beam epitaxial growth of p-SiGe inverted-modulation-doped structures. Applied Physics Letters, Vol.74 (No.4). pp. 579-581. doi:10.1063/1.123151

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Abstract

The influence of boron segregation and silicon cap-layer thickness on two-dimensional hole gases (2-DHGs) has been investigated in Si/Si0.8Ge0.2/Si inverted-modulation-doped heterostructures grown by solid-source molecular-beam epitaxy. Boron segregation, which is significant in structures with small spacer layers, can be suppressed by growth interruption after the boron doping. How growth interruption affected the electrical properties of the 2-DHG and the boron doping profile as measured by secondary ion mass spectroscopy are reported. We report also on the role played by the unpassivated silicon cap, and compare carrier transport at the normal and inverted interfaces.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics
Divisions:	Faculty of Science, Engineering and Medicine > Science > Physics
Library of Congress Subject Headings (LCSH):	Silicon alloys, Germanium alloys, Semiconductors, Molecular beam epitaxy, Hall effect, Semiconductor doping
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Official Date:	25 January 1999
Dates:	Date Event 25 January 1999 Published
Volume:	Vol.74
Number:	No.4
Page Range:	pp. 579-581
DOI:	10.1063/1.123151
Status:	Peer Reviewed
Access rights to Published version:	Open Access

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