Skip to content Skip to navigation
University of Warwick
  • Study
  • |
  • Research
  • |
  • Business
  • |
  • Alumni
  • |
  • News
  • |
  • About

University of Warwick
Publications service & WRAP

Highlight your research

  • WRAP
    • Home
    • Search WRAP
    • Browse by Warwick Author
    • Browse WRAP by Year
    • Browse WRAP by Subject
    • Browse WRAP by Department
    • Browse WRAP by Funder
    • Browse Theses by Department
  • Publications Service
    • Home
    • Search Publications Service
    • Browse by Warwick Author
    • Browse Publications service by Year
    • Browse Publications service by Subject
    • Browse Publications service by Department
    • Browse Publications service by Funder
  • Help & Advice
University of Warwick

The Library

  • Login
  • Admin

Issues on the molecular-beam epitaxial growth of p-SiGe inverted-modulation-doped structures

Tools
- Tools
+ Tools

Sadeghzadeh, Mohammad Ali, Parry, C. P., Phillips, P. J. (Peter J.), Parker, Evan H. C. and Whall, Terry E. (1999) Issues on the molecular-beam epitaxial growth of p-SiGe inverted-modulation-doped structures. Applied Physics Letters, Vol.74 (No.4). pp. 579-581. doi:10.1063/1.123151 ISSN 0003-6951.

[img]
Preview
PDF
WRAP_Sadeghzadeh_issues_molecular.pdf - Requires a PDF viewer.

Download (95Kb)
Official URL: http://dx.doi.org/10.1063/1.123151

Request Changes to record.

Abstract

The influence of boron segregation and silicon cap-layer thickness on two-dimensional hole gases (2-DHGs) has been investigated in Si/Si0.8Ge0.2/Si inverted-modulation-doped heterostructures grown by solid-source molecular-beam epitaxy. Boron segregation, which is significant in structures with small spacer layers, can be suppressed by growth interruption after the boron doping. How growth interruption affected the electrical properties of the 2-DHG and the boron doping profile as measured by secondary ion mass spectroscopy are reported. We report also on the role played by the unpassivated silicon cap, and compare carrier transport at the normal and inverted interfaces.

Item Type: Journal Article
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics
Divisions: Faculty of Science, Engineering and Medicine > Science > Physics
Library of Congress Subject Headings (LCSH): Silicon alloys, Germanium alloys, Semiconductors, Molecular beam epitaxy, Hall effect, Semiconductor doping
Journal or Publication Title: Applied Physics Letters
Publisher: American Institute of Physics
ISSN: 0003-6951
Official Date: 25 January 1999
Dates:
DateEvent
25 January 1999Published
Volume: Vol.74
Number: No.4
Page Range: pp. 579-581
DOI: 10.1063/1.123151
Status: Peer Reviewed
Access rights to Published version: Open Access (Creative Commons)

Request changes or add full text files to a record

Repository staff actions (login required)

View Item View Item

Downloads

Downloads per month over past year

View more statistics

twitter

Email us: wrap@warwick.ac.uk
Contact Details
About Us