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Issues on the molecular-beam epitaxial growth of p-SiGe inverted-modulation-doped structures

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Sadeghzadeh, Mohammad Ali, Parry, C. P., Phillips, P. J. (Peter J.), Parker, Evan H. C. and Whall, Terry E.. (1999) Issues on the molecular-beam epitaxial growth of p-SiGe inverted-modulation-doped structures. Applied Physics Letters, Vol.74 (No.4). pp. 579-581. ISSN 0003-6951

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Official URL: http://dx.doi.org/10.1063/1.123151

Abstract

The influence of boron segregation and silicon cap-layer thickness on two-dimensional hole gases (2-DHGs) has been investigated in Si/Si0.8Ge0.2/Si inverted-modulation-doped heterostructures grown by solid-source molecular-beam epitaxy. Boron segregation, which is significant in structures with small spacer layers, can be suppressed by growth interruption after the boron doping. How growth interruption affected the electrical properties of the 2-DHG and the boron doping profile as measured by secondary ion mass spectroscopy are reported. We report also on the role played by the unpassivated silicon cap, and compare carrier transport at the normal and inverted interfaces.

Item Type:

Journal Article

Subjects:

T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics

Divisions:

Faculty of Science > Physics

Library of Congress Subject Headings (LCSH):

Silicon alloys, Germanium alloys, Semiconductors, Molecular beam epitaxy, Hall effect, Semiconductor doping

Journal or Publication Title:

Applied Physics Letters

Publisher:

American Institute of Physics

ISSN:

0003-6951

Official Date:

25 January 1999

Dates:

Date	Event
25 January 1999	Published

Volume:

Vol.74

Number:

No.4

Page Range:

pp. 579-581

Identification Number:

10.1063/1.123151

Status:

Peer Reviewed

Access rights to Published version:

Open Access

References:

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URI:

http://wrap.warwick.ac.uk/id/eprint/1019

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