The Library

Accumulation layer profiles at InAs polar surfaces

Tools

Bell, Gavin R., Jones, T. S. (Tim S.) and McConville, C. F. (Chris F.). (1997) Accumulation layer profiles at InAs polar surfaces. Applied Physics Letters, Vol.71 (No.25). pp. 3688-3690. ISSN 0003-6951

Preview

PDF
WRAP_Bell_Accumulation_layer.pdf - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader
Download (84Kb)

Official URL: http://dx.doi.org/10.1063/1.120482

Abstract

High resolution electron energy loss spectroscopy, dielectric theory simulations, and charge profile calculations have been used to study the accumulation layer and surface plasmon excitations at the In-terminated (001)-(4 × 1) and (111)A-(2 × 2) surfaces of InAs. For the (001) surface, the surface state density is 4.0 ± 2.0 × 1011 cm – 2, while for the (111)A surface it is 7.5 ± 2.0 × 1011 cm – 2, these values being independent of the surface preparation procedure, bulk doping level, and substrate temperature. Changes of the bulk Fermi level with temperature and bulk doping level do, however, alter the position of the surface Fermi level. Ion bombardment and annealing of the surface affect the accumulation layer only through changes in the effective bulk doping level and the bulk momentum scattering rate, with no discernible changes in the surface charge density.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics
Divisions:	Faculty of Science > Chemistry Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Indium compounds, Compound semiconductors, Electron energy loss spectroscopy, Plasmons (Physics), Fermi surfaces
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Date:	22 December 1997
Volume:	Vol.71
Number:	No.25
Page Range:	pp. 3688-3690
Identification Number:	10.1063/1.120482
Status:	Peer Reviewed
Access rights to Published version:	Open Access
References:	# M. Noguchi, K. Hirakawa, and I. Ikoma, Phys. Rev. Lett. 66, 2243 (1991). # G. R. Bell, C. F. McConville, and T. S. Jones, Phys. Rev. B 54, 2654 (1996). # Y. Chen, J. C. Hermanson, and G. J. Lapeyre, Phys. Rev. B 39, 12 682 (1989). # L. Ö. Olsson, C. B. M. Andersson, M. C. Håkansson, J. Kanski, L. Ilver, and U. O. Karlsson, Phys. Rev. Lett. 76, 3626 (1996). # J. M. Woodall, J. L. Freeouf, G. D. Petit, T. Jackson, and P. Kirchner, J. Vac. Sci. Technol. 19, 626 (1981). # J. Tersoff, Phys. Rev. Lett. 52, 465 (1984). # Ph. Lambin, J. P. Vigneron, and A. A. Lucas, Comput. Phys. Commun. 60, 351 (1990). # G. R. Bell, T. S. Jones, and C. F. McConville, Surface Sci. (accepted for publication). # J. P. Zollner, T. Fielder, and G. Bobsch, Phys. Status Solidi B 134, 837 (1986). # G. R. Bell, C. F. McConville, C. P. A. Mulcahy, and T. S. Jones, J. Phys.: Condens. Matter 9, 2903 (1997). # H. Ubensee and G. Paasch, Phys. Rev. B 39, 1955 (1988). # H. Ibach and D. L. Mills, Electron Energy Loss Spectroscopy and Surface Vibrations (Academic, New York, 1982). # T. S. Jones, M. O. Schweitzer, N. V. Richardson, G. R. Bell, and C. F. McConville, Phys. Rev. B 51, 17 675 (1995). # G. R. Bell, C. F. McConville, and T. S. Jones, Appl. Surf. Sci. 104/105, 15 (1996). # C. Kendrick, G. LeLay, and A. Kahn, Phys. Rev. B 54, 17 877 (1996). # H. Yamaguchi, J. G. Belk, J. L. Sudijono, T. S. Jones, and B. A. Joyce, Appl. Phys. Lett. (submitted).
URI:	http://wrap.warwick.ac.uk/id/eprint/1020