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Accumulation layer profiles at InAs polar surfaces

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Bell, Gavin R., Jones, T. S. (Tim S.) and McConville, C. F. (Chris F.). (1997) Accumulation layer profiles at InAs polar surfaces. Applied Physics Letters, Vol.71 (No.25). pp. 3688-3690. ISSN 0003-6951

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Official URL: http://dx.doi.org/10.1063/1.120482

Abstract

High resolution electron energy loss spectroscopy, dielectric theory simulations, and charge profile calculations have been used to study the accumulation layer and surface plasmon excitations at the In-terminated (001)-(4 × 1) and (111)A-(2 × 2) surfaces of InAs. For the (001) surface, the surface state density is 4.0 ± 2.0 × 1011 cm – 2, while for the (111)A surface it is 7.5 ± 2.0 × 1011 cm – 2, these values being independent of the surface preparation procedure, bulk doping level, and substrate temperature. Changes of the bulk Fermi level with temperature and bulk doping level do, however, alter the position of the surface Fermi level. Ion bombardment and annealing of the surface affect the accumulation layer only through changes in the effective bulk doping level and the bulk momentum scattering rate, with no discernible changes in the surface charge density.

Item Type:

Journal Article

Subjects:

T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics

Divisions:

Faculty of Science > Chemistry
Faculty of Science > Physics

Library of Congress Subject Headings (LCSH):

Indium compounds, Compound semiconductors, Electron energy loss spectroscopy, Plasmons (Physics), Fermi surfaces

Journal or Publication Title:

Applied Physics Letters

Publisher:

American Institute of Physics

ISSN:

0003-6951

Official Date:

22 December 1997

Dates:

Date	Event
22 December 1997	Published

Volume:

Vol.71

Number:

No.25

Page Range:

pp. 3688-3690

Identification Number:

10.1063/1.120482

Status:

Peer Reviewed

Access rights to Published version:

Open Access

References:

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