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The elimination of surface cross-hatch from relaxed, limited-area Si1 – xGex buffer layers
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Hammond, Richard, Phillips, P. J. (Peter J.), Parker, Evan H. C., Whall, Terry E., Graf, Thomas, 1966-, Känel, H. von and Sheilds, A. J.. (1997) The elimination of surface cross-hatch from relaxed, limited-area Si1 – xGex buffer layers. Applied Physics Letters, Vol.71 (No.17). pp. 2517-2519. ISSN 0003-6951
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Official URL: http://dx.doi.org/10.1063/1.120105
Abstract
The influence of lateral dimensions on the relaxation and surface topography of linearly graded Si1 – xGex buffer layers has been investigated. A dramatic change in the relaxation mechanism has been observed for depositions on Si mesa pillars of lateral dimensions 10 µm and below. Misfit dislocations are able to extend unhindered and terminate at the edges of the growth zone, yielding a surface free of cross-hatch. For lateral dimensions in excess of 10 µm orthogonal misfit interactions occur and relaxation is dominated by the modified Frank–Read (MFR) mechanism. The stress fields associated with the MFR dislocation pile-ups result in a pronounced cross-hatch topography.
| Item Type: | Journal Article |
|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
| Divisions: | Faculty of Science > Physics |
| Library of Congress Subject Headings (LCSH): | Silicon alloys, Germanium alloys, Dislocations in metals, Dielectric relaxation, Semiconductors -- Junctions |
| Journal or Publication Title: | Applied Physics Letters |
| Publisher: | American Institute of Physics |
| ISSN: | 0003-6951 |
| Date: | 27 October 1997 |
| Volume: | Vol.71 |
| Number: | No.17 |
| Page Range: | pp. 2517-2519 |
| Identification Number: | 10.1063/1.120105 |
| Status: | Peer Reviewed |
| Access rights to Published version: | Open Access |
| Funder: | Engineering and Physical Sciences Research Council (EPSRC), Swiss Priority Program MINAST |
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| URI: | http://wrap.warwick.ac.uk/id/eprint/1021 |
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