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Back gating of a two-dimensional hole gas in a SiGe quantum well

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Emeleus, C. J., Sadeghzadeh, Mohammad Ali, Phillips, P. J. (Peter J.), Parker, Evan H. C., Whall, Terry E., Pepper, M. and Evans, A. G. R.. (1997) Back gating of a two-dimensional hole gas in a SiGe quantum well. Applied Physics Letters, Vol.70 (No.14). pp. 1870-1872. ISSN 0003-6951

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Official URL: http://dx.doi.org/10.1063/1.118729

Abstract

A device comprising a low-resistivity, n-type, Si substrate as a back gate to a p-type (boron), remote-doped, SiGe quantum well has been fabricated and characterized. Reverse and forward voltage biasing of the gate with respect to the two-dimensional hole gas in the quantum well allows the density of holes to be varied from 8 × 1011 cm–2 down to a measurement-limited value of 4 × 1011 cm–2. This device is used to demonstrate the evolution with decreasing carrier density of a re-entrant insulator state between the integer quantum Hall effect states with filling factors 1 and 3.

Item Type:

Journal Article

Subjects:

T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics

Divisions:

Faculty of Science > Physics

Library of Congress Subject Headings (LCSH):

Silicon alloys, Germanium alloys, Quantum Hall effect, Quantum wells, Semiconductors

Journal or Publication Title:

Applied Physics Letters

Publisher:

American Institute of Physics

ISSN:

0003-6951

Official Date:

7 April 1997

Dates:

Date	Event
7 April 1997	Published

Volume:

Vol.70

Number:

No.14

Page Range:

pp. 1870-1872

Identification Number:

10.1063/1.118729

Status:

Peer Reviewed

Access rights to Published version:

Restricted or Subscription Access

Funder:

Engineering and Physical Sciences Research Council (EPSRC)

References:

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