Antimony diffusion in silicon gemanium alloys under point defect injection
UNSPECIFIED (2002) Antimony diffusion in silicon gemanium alloys under point defect injection. In: Symposium on Silicon-based Heterostructure Materials held at the 8th IUMRS International Conference on Electronic Materials (IUMRS-ICEM2002), XIAN, PEOPLES R CHINA, JUN 10-14, 2002. Published in: INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29). pp. 4195-4198.Full text not available from this repository.
Antimony diffusion in in-situ doped strained Si0.9Ge0.1 epitaxial layers, subjected to point defects injection by rapid thermal anneal in oxygen atmosphere, was investigated as a function of temperature at range from 890degreesC to 1000degreesC. In this work, the effect of point defect injection on the diffusion of antimony in silicon and silicon-germanium alloys has confirmed the predominant mechanism for diffusion of Sb in Si and SiGe to be vacancy mediated. Diffusivities were obtained using computer simulations. Activation energies were calculated while the diffusivity of antinomy in SiGe under point defect injection as a function of temperature was presented.
|Item Type:||Conference Item (UNSPECIFIED)|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||INTERNATIONAL JOURNAL OF MODERN PHYSICS B|
|Publisher:||WORLD SCIENTIFIC PUBL CO PTE LTD|
|Date:||20 November 2002|
|Number of Pages:||4|
|Page Range:||pp. 4195-4198|
|Title of Event:||Symposium on Silicon-based Heterostructure Materials held at the 8th IUMRS International Conference on Electronic Materials (IUMRS-ICEM2002)|
|Location of Event:||XIAN, PEOPLES R CHINA|
|Date(s) of Event:||JUN 10-14, 2002|
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