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Low temperature characterization of modulation doped SiGe grown on bonded silicon-on-insulator

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Paul, Douglas J. (Professor of Semiconductor Devices)‏ , Griffin, N., Arnone, D. D., Pepper, M., Emeleus, C. J., Phillips, P. J. (Peter J.) and Whall, Terry E.. (1996) Low temperature characterization of modulation doped SiGe grown on bonded silicon-on-insulator. Applied Physics Letters, Vol.69 (No.18). pp. 2704-2706. ISSN 0003-6951

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Official URL: http://dx.doi.org/10.1063/1.117684

Abstract

Modulation doped pseudomorphic Si0.87Ge0.13 strained quantum wells were grown on bonded silicon-on-insulator (SOI) substrates. Comparison with similar structures grown on bulk Si(100) wafers shows that the SOI material has higher mobility at low temperatures with a maximum value of 16 810 cm 2/V s for 2.05 × 1011 cm – 2 carries at 298 mK. Effective masses obtained from the temperature dependence of Shubnikov–de Haas oscillations have a value of (0.27 ± 0.02) m0 compared to (0.23 ± 0.02) m0 for quantum wells on Si(100) while the cyclotron resonance effective masses obtained at higher magnetic fields without consideration for nonparabolicity effects have values between 0.25 and 0.29 m0. Ratios of the transport and quantum lifetimes, tau/tau q=2.13 ± 0.10, were obtained for the SOI material that are, we believe, the highest reported for any pseudomorphic SiGe modulation doped structure and demonstrates that there is less interface roughness or charge scattering in the SOI material than in metal–oxide–semiconductor field effect transistors or other pseudomorphic SiGe modulation doped quantum wells.

Item Type:

Journal Article

Subjects:

T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics

Divisions:

Faculty of Science > Physics

Library of Congress Subject Headings (LCSH):

Germanium compounds, Molecular beam epitaxy, Quantum wells, Semiconductor doping, Semiconductor films

Journal or Publication Title:

Applied Physics Letters

Publisher:

American Institute of Physics

ISSN:

0003-6951

Official Date:

28 October 1996

Dates:

Date	Event
28 October 1996	Published

Volume:

Vol.69

Number:

No.18

Page Range:

pp. 2704-2706

Identification Number:

10.1063/1.117684

Status:

Peer Reviewed

Access rights to Published version:

Open Access

Funder:

Engineering and Physical Sciences Research Council (EPSRC)

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