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Terrace grading of SiGe for high-quality virtual substrates
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UNSPECIFIED. (2002) Terrace grading of SiGe for high-quality virtual substrates. APPLIED PHYSICS LETTERS, 81 (25). pp. 4775-4777. ISSN 0003-6951
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Official URL: http://dx.doi.org/10.1063/1.1529308
Abstract
Silicon germanium (SiGe) virtual substrates of final germanium composition x=0.50 have been fabricated using solid-source molecular beam epitaxy with a thickness of 2 mum. A layer structure that helps limit the size of dislocation pileups associated with the modified Frank-Read dislocation multiplication mechanism has been studied. It is shown that this structure can produce lower threading dislocation densities than conventional linearly graded virtual substrates. Cross-sectional transmission electron microscopy shows the superior quality of the dislocation network in the graded regions with a lower rms roughness shown by atomic force microscopy. X-ray diffractometry shows these layers to be highly relaxed. This method of Ge grading suggests that high-quality virtual substrates can be grown considerably thinner than with conventional grading methods. (C) 2002 American Institute of Physics.
| Item Type: | Journal Article |
|---|---|
| Subjects: | Q Science > QC Physics |
| Journal or Publication Title: | APPLIED PHYSICS LETTERS |
| Publisher: | AMER INST PHYSICS |
| ISSN: | 0003-6951 |
| Date: | 16 December 2002 |
| Volume: | 81 |
| Number: | 25 |
| Number of Pages: | 3 |
| Page Range: | pp. 4775-4777 |
| Identification Number: | 10.1063/1.1529308 |
| Publication Status: | Published |
| URI: | http://wrap.warwick.ac.uk/id/eprint/10237 |
Data sourced from Thomson Reuters' Web of Knowledge
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