Terrace grading of SiGe for high-quality virtual substrates
UNSPECIFIED. (2002) Terrace grading of SiGe for high-quality virtual substrates. APPLIED PHYSICS LETTERS, 81 (25). pp. 4775-4777. ISSN 0003-6951Full text not available from this repository.
Official URL: http://dx.doi.org/10.1063/1.1529308
Silicon germanium (SiGe) virtual substrates of final germanium composition x=0.50 have been fabricated using solid-source molecular beam epitaxy with a thickness of 2 mum. A layer structure that helps limit the size of dislocation pileups associated with the modified Frank-Read dislocation multiplication mechanism has been studied. It is shown that this structure can produce lower threading dislocation densities than conventional linearly graded virtual substrates. Cross-sectional transmission electron microscopy shows the superior quality of the dislocation network in the graded regions with a lower rms roughness shown by atomic force microscopy. X-ray diffractometry shows these layers to be highly relaxed. This method of Ge grading suggests that high-quality virtual substrates can be grown considerably thinner than with conventional grading methods. (C) 2002 American Institute of Physics.
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||APPLIED PHYSICS LETTERS|
|Publisher:||AMER INST PHYSICS|
|Official Date:||16 December 2002|
|Number of Pages:||3|
|Page Range:||pp. 4775-4777|
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