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Atomic hydrogen cleaning of GaSb(001) surfaces

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Bell, Gavin R. and McConville, C. F. (Chris F.). (1996) Atomic hydrogen cleaning of GaSb(001) surfaces. Applied Physics Letters, Vol.69 (No.18). pp. 2695-2697. ISSN 0003-6951

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Official URL: http://dx.doi.org/10.1063/1.117681

Abstract

We show that the (001) surface of GaSb can be cleaned efficiently by exposure to atomic hydrogen at substrate temperatures in the range 400–470 °C. This treatment removes carbon and oxygen contamination, leaving a clean, ordered surface with a symmetric (1 × 3) reconstruction after a total H2 dose of approximately 150 kL. An ordered but partially oxidized surface is generated during cleaning, and the removal of this residual oxide is the most difficult part of the process. Auger electron spectroscopy and low energy electron diffraction were used to monitor the chemical cleanliness and the ordering of the surface during the cleaning process, whereas high resolution electron energy loss spectroscopy was used to probe the electronic structure in the near-surface region. The results obtained indicates that this cleaning procedure leaves no residual electronic damage in the near-surface region of the Te-doped (n ~ 5 × 1017 cm – 3) samples of GaSb(001) studied.

Item Type:

Journal Article

Subjects:

T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics

Divisions:

Faculty of Science > Physics

Library of Congress Subject Headings (LCSH):

Gallium arsenide semiconductors, Semiconductors -- Defects, Atomic hydrogen, Electron energy loss spectroscopy, Low energy electron diffraction

Journal or Publication Title:

Applied Physics Letters

Publisher:

American Institute of Physics

ISSN:

0003-6951

Official Date:

28 October 1996

Dates:

Date	Event
28 October 1996	Published

Volume:

Vol.69

Number:

No.18

Page Range:

pp. 2695-2697

Identification Number:

10.1063/1.117681

Status:

Peer Reviewed

Access rights to Published version:

Restricted or Subscription Access

Funder:

Royal Society (Great Britain), Engineering and Physical Sciences Research Council (EPSRC)

Grant number:

RSRG/16236 (RS)

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