Magnetotransport and Raman characterization of n-InSb/i-GaAs epilayers for Hall sensors applications over extremely wide ranges of temperature and magnetic field
UNSPECIFIED (2001) Magnetotransport and Raman characterization of n-InSb/i-GaAs epilayers for Hall sensors applications over extremely wide ranges of temperature and magnetic field. In: 10th International Conference on Narrow Gap Semiconductors and Related Small Energy Phenomena, Physics and Applications (NGS10), KANAZAWA, JAPAN, MAY 27-31, 2001. Published in: PROCEEDINGS OF THE 10TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND RELATED SMALL ENERGY PHENOMENA, PHYSICS AND APPLICATIONS, 2 pp. 151-154.Full text not available from this repository.
Miniature Hall sensors of different geometries based on n-InSb/i-GaAs heavily Sn-doped heterostructures are reported. The thicknesses of the n-InSb epilayers lie in the range d = 0.66-5.5 mum giving room temperature mobilities of (10-35) x 10(3) cm(2)/Vs with carrier densities of (0.6-2.5) x 10(18) cm(-2). Characterization of the devices is performed by micro-Raman and magnetotransport measurements. In the temperature range 1.1K-300K and in fields up to 11T (static) and up to 33T (20 ms pulsed), transport measurements yield remarkable sensitivities, as well as demonstrating the high temperature stability of the Hall and the offset voltages. Very high doping produces good linearity of the Hall voltage up to 33T. No significant effect of a high pulsed current at T=77K and 300K on either the sensitivity or the resistivity is observed. The noise spectrum is measured in order to determine the minimum detectable magnetic field at 300 K. The results are better than those found with 2DEGs in the highest quality GaAs/GaAlAs quantum-well Hall devices.
|Item Type:||Conference Item (UNSPECIFIED)|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering
T Technology > TA Engineering (General). Civil engineering (General)
Q Science > QC Physics
|Series Name:||IPAP CONFERENCE SERIES|
|Journal or Publication Title:||PROCEEDINGS OF THE 10TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND RELATED SMALL ENERGY PHENOMENA, PHYSICS AND APPLICATIONS|
|Publisher:||INST PURE APPLIED PHYSICS|
|Number of Pages:||4|
|Page Range:||pp. 151-154|
|Title of Event:||10th International Conference on Narrow Gap Semiconductors and Related Small Energy Phenomena, Physics and Applications (NGS10)|
|Location of Event:||KANAZAWA, JAPAN|
|Date(s) of Event:||MAY 27-31, 2001|
Actions (login required)