King, P. J. C., Breese, Mark B. H., 1966-, Smulders, P. J. M., Wilkinson, A. J., Booker, G. R., Parker, Evan H. C. and Grime, G. W. (Geoff W.). (1995) Evidence from ion channeling images for the elastic relaxation of a Si0.85Ge0.15 layer grown on a patterned Si substrate. Applied Physics Letters, Vol.67 (No.24). pp. 3566-3568. ISSN 0003-6951

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Abstract

We demonstrate the ability of ion channeling analysis using a scanned, focused, 2 MeV proton beam from a nuclear microprobe to detect and quantify elastic relaxation in a Si1 – xGex layer grown on a Si substrate. Channeling images of a sample consisting of a Si0.85Ge0.15 layer grown on a substrate patterned to produce 10 µm wide raised mesas were produced which revealed lattice plane bending of up to 0.25°, consistent with elastic relaxation of the epilayer. The channeling results are compared with those produced from electron backscattering diffraction.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics
Divisions:	Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Germanium alloys, Silicon alloys, Epitaxy, Ion channels, Elasticity
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Date:	11 December 1995
Volume:	Vol.67
Number:	No.24
Page Range:	pp. 3566-3568
Identification Number:	10.1063/1.115319
Status:	Peer Reviewed
Access rights to Published version:	Open Access
Funder:	Science and Engineering Research Council (Great Britain) (SERC)
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URI:	http://wrap.warwick.ac.uk/id/eprint/1028

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