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Probing the interfacial and sub-surface structure of Si/Si1 – xGex multilayers

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Sugden, S., Sofield, C. J., Noakes, T. C. Q., Kubiak, Richard A. A. and McConville, C. F. (Chris F.). (1995) Probing the interfacial and sub-surface structure of Si/Si1 – xGex multilayers. Applied Physics Letters, Vol.66 (No.21). pp. 2849-2851. ISSN 0003-6951

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Official URL: http://dx.doi.org/10.1063/1.113450

Abstract

The ability to determine structural and compositional information from the sub-surface region of a semiconductor material has been demonstrated using a new time-of-flight medium energy ion scattering spectroscopy (ToF-MEISS) system. A series of silicon–silicon/germanium (Si/Si1 – xGex) heterostructure and multilayer samples, grown using both solid source molecular beam epitaxy (MBE) and gas source chemical vapor deposition (CVD) on Si(100) substrates, have been investigated. These data indicate that each individual layer of Si1 – xGex (x ~ 0.22) in both two- and three-period samples, can be uniquely identified with a resolution of approximately 3 nm. A comparison of MBE and CVD grown samples has also been made using layers with similar structures and composition. The total Ge content of each sample was confirmed using conventional Rutherford backscattering spectrometry.

Item Type:

Journal Article

Subjects:

T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics

Divisions:

Faculty of Science > Physics

Library of Congress Subject Headings (LCSH):

Silicon alloys, Germanium alloys, Molecular beam epitaxy, Heterostructures, Thin films, Multilayered

Journal or Publication Title:

Applied Physics Letters

Publisher:

American Institute of Physics

ISSN:

0003-6951

Official Date:

22 May 1995

Dates:

Date	Event
22 May 1995	Published

Volume:

Vol.66

Number:

No.21

Page Range:

pp. 2849-2851

DOI:

10.1063/1.113450

Status:

Peer Reviewed

Access rights to Published version:

Open Access

Funder:

Great Britain. Dept. of Trade and Industry (DTI), AEA Technology (Firm)

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URI:

http://wrap.warwick.ac.uk/id/eprint/1030

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