Skip to content Skip to navigation
University of Warwick
  • Study
  • |
  • Research
  • |
  • Business
  • |
  • Alumni
  • |
  • News
  • |
  • About

University of Warwick
Publications service & WRAP

Highlight your research

  • WRAP
    • Home
    • Search WRAP
    • Browse by Warwick Author
    • Browse WRAP by Year
    • Browse WRAP by Subject
    • Browse WRAP by Department
    • Browse WRAP by Funder
    • Browse Theses by Department
  • Publications Service
    • Home
    • Search Publications Service
    • Browse by Warwick Author
    • Browse Publications service by Year
    • Browse Publications service by Subject
    • Browse Publications service by Department
    • Browse Publications service by Funder
  • Help & Advice
University of Warwick

The Library

  • Login
  • Admin

Probing the interfacial and sub-surface structure of Si/Si1 – xGex multilayers

Tools
- Tools
+ Tools

Sugden, S., Sofield, C. J., Noakes, T. C. Q., Kubiak, Richard A. A. and McConville, C. F. (Chris F.) (1995) Probing the interfacial and sub-surface structure of Si/Si1 – xGex multilayers. Applied Physics Letters, Vol.66 (No.21). pp. 2849-2851. doi:10.1063/1.113450

[img]
Preview
PDF
WRAP_Sugden_Probing_interfacial.pdf - Requires a PDF viewer.

Download (107Kb)
Official URL: http://dx.doi.org/10.1063/1.113450

Request Changes to record.

Abstract

The ability to determine structural and compositional information from the sub-surface region of a semiconductor material has been demonstrated using a new time-of-flight medium energy ion scattering spectroscopy (ToF-MEISS) system. A series of silicon–silicon/germanium (Si/Si1 – xGex) heterostructure and multilayer samples, grown using both solid source molecular beam epitaxy (MBE) and gas source chemical vapor deposition (CVD) on Si(100) substrates, have been investigated. These data indicate that each individual layer of Si1 – xGex (x ~ 0.22) in both two- and three-period samples, can be uniquely identified with a resolution of approximately 3 nm. A comparison of MBE and CVD grown samples has also been made using layers with similar structures and composition. The total Ge content of each sample was confirmed using conventional Rutherford backscattering spectrometry.

Item Type: Journal Article
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics
Divisions: Faculty of Science > Physics
Library of Congress Subject Headings (LCSH): Silicon alloys, Germanium alloys, Molecular beam epitaxy, Heterostructures, Thin films, Multilayered
Journal or Publication Title: Applied Physics Letters
Publisher: American Institute of Physics
ISSN: 0003-6951
Official Date: 22 May 1995
Dates:
DateEvent
22 May 1995Published
Volume: Vol.66
Number: No.21
Page Range: pp. 2849-2851
DOI: 10.1063/1.113450
Status: Peer Reviewed
Access rights to Published version: Open Access
Funder: Great Britain. Dept. of Trade and Industry (DTI), AEA Technology (Firm)

Request changes or add full text files to a record

Repository staff actions (login required)

View Item View Item

Downloads

Downloads per month over past year

View more statistics

twitter

Email us: publications@live.warwick.ac.uk
Contact Details
About Us