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Probing the interfacial and sub-surface structure of Si/Si1 – xGex multilayers
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Sugden, S., Sofield, C. J., Noakes, T. C. Q., Kubiak, Richard A. A. and McConville, C. F. (Chris F.) (1995) Probing the interfacial and sub-surface structure of Si/Si1 – xGex multilayers. Applied Physics Letters, Vol.66 (No.21). pp. 2849-2851. doi:10.1063/1.113450
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Official URL: http://dx.doi.org/10.1063/1.113450
Abstract
The ability to determine structural and compositional information from the sub-surface region of a semiconductor material has been demonstrated using a new time-of-flight medium energy ion scattering spectroscopy (ToF-MEISS) system. A series of silicon–silicon/germanium (Si/Si1 – xGex) heterostructure and multilayer samples, grown using both solid source molecular beam epitaxy (MBE) and gas source chemical vapor deposition (CVD) on Si(100) substrates, have been investigated. These data indicate that each individual layer of Si1 – xGex (x ~ 0.22) in both two- and three-period samples, can be uniquely identified with a resolution of approximately 3 nm. A comparison of MBE and CVD grown samples has also been made using layers with similar structures and composition. The total Ge content of each sample was confirmed using conventional Rutherford backscattering spectrometry.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
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| Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
| Library of Congress Subject Headings (LCSH): | Silicon alloys, Germanium alloys, Molecular beam epitaxy, Heterostructures, Thin films, Multilayered | ||||
| Journal or Publication Title: | Applied Physics Letters | ||||
| Publisher: | American Institute of Physics | ||||
| ISSN: | 0003-6951 | ||||
| Official Date: | 22 May 1995 | ||||
| Dates: |
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| Volume: | Vol.66 | ||||
| Number: | No.21 | ||||
| Page Range: | pp. 2849-2851 | ||||
| DOI: | 10.1063/1.113450 | ||||
| Status: | Peer Reviewed | ||||
| Access rights to Published version: | Open Access | ||||
| Funder: | Great Britain. Dept. of Trade and Industry (DTI), AEA Technology (Firm) |
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