Sugden, S., Sofield, C. J., Noakes, T. C. Q., Kubiak, Richard A. A. and McConville, C. F. (Chris F.). (1995) Probing the interfacial and sub-surface structure of Si/Si1 – xGex multilayers. Applied Physics Letters, Vol.66 (No.21). pp. 2849-2851. ISSN 0003-6951

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Abstract

The ability to determine structural and compositional information from the sub-surface region of a semiconductor material has been demonstrated using a new time-of-flight medium energy ion scattering spectroscopy (ToF-MEISS) system. A series of silicon–silicon/germanium (Si/Si1 – xGex) heterostructure and multilayer samples, grown using both solid source molecular beam epitaxy (MBE) and gas source chemical vapor deposition (CVD) on Si(100) substrates, have been investigated. These data indicate that each individual layer of Si1 – xGex (x ~ 0.22) in both two- and three-period samples, can be uniquely identified with a resolution of approximately 3 nm. A comparison of MBE and CVD grown samples has also been made using layers with similar structures and composition. The total Ge content of each sample was confirmed using conventional Rutherford backscattering spectrometry.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics
Divisions:	Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Silicon alloys, Germanium alloys, Molecular beam epitaxy, Heterostructures, Thin films, Multilayered
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Date:	22 May 1995
Volume:	Vol.66
Number:	No.21
Page Range:	pp. 2849-2851
Identification Number:	10.1063/1.113450
Status:	Peer Reviewed
Access rights to Published version:	Open Access
Funder:	Great Britain. Dept. of Trade and Industry (DTI), AEA Technology (Firm)
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URI:	http://wrap.warwick.ac.uk/id/eprint/1030

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