Whall, Terry E., Plews, Andrew D., Mattey, Nevil L., Phillips, P. J. (Peter J.) and Ekenberg, U. (1995) Effective mass and band nonparabolicity in remote doped Si/Si0.8Ge0.2 quantum wells. Applied Physics Letters, Vol.66 (No.20). pp. 2724-2726. doi:10.1063/1.113501 ISSN 0003-6951.

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Abstract

The effective masses in remote doped Si/Si0.8Ge0.2/Si quantum wells having sheet densities, Ns in the range 2 × 1011–1.1 × 1012 cm – 2 have been determined from the temperature dependencies of the Shubnikov–de Haas oscillations. The values obtained increase with magnetic field and Ns. This behavior is taken as evidence for the nonparabolicity of the valence band and accounts for the discrepancies in previously reported masses. Self-consistent band structure calculations for a triangular confinement of the carriers have also been carried out and provide confirmation of the increase in mass with Ns. Theory and experiment give extrapolated Gamma point effective masses of 0.21 and 0.20 of the free-electron mass, respectively.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics
Divisions:	Faculty of Science, Engineering and Medicine > Science > Physics
Library of Congress Subject Headings (LCSH):	Silicon alloys, Germanium alloys, Quantum wells, Semiconductor doping, Conduction band, Effective mass (Physics)
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Official Date:	15 May 1995
Dates:	Date Event 15 May 1995 Published
Volume:	Vol.66
Number:	No.20
Page Range:	pp. 2724-2726
DOI:	10.1063/1.113501
Status:	Peer Reviewed
Access rights to Published version:	Open Access (Creative Commons)

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