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Very high two-dimensional hole gas mobilities in strained silicon germanium

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Basaran, Engin, Kubiak, Richard A. A., Whall, Terry E. and Parker, Evan H. C.. (1994) Very high two-dimensional hole gas mobilities in strained silicon germanium. Applied Physics Letters, Vol.64 (No.25). pp. 3470-3472. ISSN 0003-6951

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Official URL: http://dx.doi.org/10.1063/1.111244

Abstract

We report on the growth by solid source MBE and characterization of remote doped Si/SiGe/Si two-dimensional hole gas structures. It has been found that by reducing the Ge composition to <=13% and limiting the thickness of the alloy layer, growth temperatures can be increased up to 950 °C for these structures while maintaining good structural integrity and planar interfaces. Record mobilities of 19 820 cm2 V−1 s−1 at 7 K were obtained in normal structures. Our calculations suggest that alloy scattering is not important in these structures and that interface roughness and interface charge scattering limit the low temperature mobilities.

Item Type:

Journal Article

Subjects:

T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics

Divisions:

Faculty of Science > Physics

Library of Congress Subject Headings (LCSH):

Silicon alloys, Germanium alloys, Holes (Electron deficiencies), Heterostructures, Molecular beam epitaxy

Journal or Publication Title:

Applied Physics Letters

Publisher:

American Institute of Physics

ISSN:

0003-6951

Official Date:

20 June 1994

Dates:

Date	Event
20 June 1994	Published

Volume:

Vol.64

Number:

No.25

Page Range:

pp. 3470-3472

Identification Number:

10.1063/1.111244

Status:

Peer Reviewed

Access rights to Published version:

Open Access

References:

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URI:

http://wrap.warwick.ac.uk/id/eprint/1034

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