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Very high two-dimensional hole gas mobilities in strained silicon germanium

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Basaran, Engin, Kubiak, Richard A. A., Whall, Terry E. and Parker, Evan H. C.. (1994) Very high two-dimensional hole gas mobilities in strained silicon germanium. Applied Physics Letters, Vol.64 (No.25). pp. 3470-3472. ISSN 0003-6951

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Abstract

We report on the growth by solid source MBE and characterization of remote doped Si/SiGe/Si two-dimensional hole gas structures. It has been found that by reducing the Ge composition to <=13% and limiting the thickness of the alloy layer, growth temperatures can be increased up to 950 °C for these structures while maintaining good structural integrity and planar interfaces. Record mobilities of 19 820 cm2 V−1 s−1 at 7 K were obtained in normal structures. Our calculations suggest that alloy scattering is not important in these structures and that interface roughness and interface charge scattering limit the low temperature mobilities.

Item Type: Journal Article
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics
Divisions: Faculty of Science > Physics
Library of Congress Subject Headings (LCSH): Silicon alloys, Germanium alloys, Holes (Electron deficiencies), Heterostructures, Molecular beam epitaxy
Journal or Publication Title: Applied Physics Letters
Publisher: American Institute of Physics
ISSN: 0003-6951
Official Date: 20 June 1994
Volume: Vol.64
Number: No.25
Page Range: pp. 3470-3472
Identification Number: 10.1063/1.111244
Status: Peer Reviewed
Access rights to Published version: Open Access
References:

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URI: http://wrap.warwick.ac.uk/id/eprint/1034

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