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Coulomb blockade in silicon based structures at temperatures up to 50 K
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Paul, D. J., Cleaver, J. R. A., Ahmed, H. and Whall, Terry E.. (1993) Coulomb blockade in silicon based structures at temperatures up to 50 K. Applied Physics Letters, Vol.63 (No.5). pp. 631-632. ISSN 0003-6951
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Official URL: http://dx.doi.org/10.1063/1.109972
Abstract
Coulomb blockade has been observed in the current-voltage characteristics of structures fabricated in silicon germanium delta-doped material at temperatures up to 50 K. This is consistent with the estimated effective tunnel capacitance of 10 aF which is significantly smaller than the reported capacitances of tunnel junctions made from Al or GaAs/AlGaAs heterostructures.
| Item Type: | Journal Article |
|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
| Divisions: | Faculty of Science > Physics |
| Library of Congress Subject Headings (LCSH): | Silicon alloys, Germanium alloys, Semiconductors -- Junctions, Heterojunctions, Tunnel diodes, Semiconductor doping |
| Journal or Publication Title: | Applied Physics Letters |
| Publisher: | American Institute of Physics |
| ISSN: | 0003-6951 |
| Date: | 2 August 1993 |
| Volume: | Vol.63 |
| Number: | No.5 |
| Page Range: | pp. 631-632 |
| Identification Number: | 10.1063/1.109972 |
| Status: | Peer Reviewed |
| Access rights to Published version: | Open Access |
| Funder: | Science and Engineering Research Council (Great Britain) (SERC), Great Britain. Dept. of Trade and Industry (DTI) |
| References: | # D. V. Averin and K. K. Likharev, in Mesoscopic Phenomena in Solids, edited by B. L. Altshuler, P. A. Lee, and R. A. Webb (North-Holland, Amsterdam, 1991), p. 169. # T. A. Fulton and G. J. Dolan, Phys. Rev. Lett. 59, 109 (1987). # M. H. Devoret and H. Grabert, in Single Charge Tunneling, edited by H. Grabert and M. H. Devoret (Plenum, New York, 1992), p. 1. # K. Nakazato, R. J. Blaikie, J. R. A. Cleaver, and H. Ahmed, Electron. Lett. 29, 384 (1993). # Y. Feng, T. J. Thornton, J. J. Harris, and D. A. Williams, Appl. Phys. Lett. 60, 94 (1992). # K. Nakazato, T. J. Thornton, J. White, and H. Ahmed, Appl. Phys. Lett. 61, 3145 (1992). # E. Kasper and F. Schaffler, in Semiconductors and Semimetals, edited by T. P. Pearsall (Academic, San Diego, 1991), Vol. 33, p. 223. # A. I. Yakimov, V. A. Markov, A. V. Dvurechenskii, and O. P. Pehelyakov, Philos. Mag. B 65, 701 (1992). # D. J. Paul, J. R. A. Cleaver, and H. Ahmed, Microelectron. Eng. 21, 349 (1993). # K. Ismail, B. S. Meyerson, and P. J. Wang, Appl. Phys. Lett. 58, 2117 (1991). |
| URI: | http://wrap.warwick.ac.uk/id/eprint/1036 |
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