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Coulomb blockade in silicon based structures at temperatures up to 50 K
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Paul, Douglas J. (Professor of Semiconductor Devices) , Cleaver, J. R. A., Ahmed, H. and Whall, Terry E. (1993) Coulomb blockade in silicon based structures at temperatures up to 50 K. Applied Physics Letters, Vol.63 (No.5). pp. 631-632. doi:10.1063/1.109972 ISSN 0003-6951.
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Official URL: http://dx.doi.org/10.1063/1.109972
Abstract
Coulomb blockade has been observed in the current-voltage characteristics of structures fabricated in silicon germanium delta-doped material at temperatures up to 50 K. This is consistent with the estimated effective tunnel capacitance of 10 aF which is significantly smaller than the reported capacitances of tunnel junctions made from Al or GaAs/AlGaAs heterostructures.
Item Type: | Journal Article | ||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Library of Congress Subject Headings (LCSH): | Silicon alloys, Germanium alloys, Semiconductors -- Junctions, Heterojunctions, Tunnel diodes, Semiconductor doping | ||||
Journal or Publication Title: | Applied Physics Letters | ||||
Publisher: | American Institute of Physics | ||||
ISSN: | 0003-6951 | ||||
Official Date: | 2 August 1993 | ||||
Dates: |
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Volume: | Vol.63 | ||||
Number: | No.5 | ||||
Page Range: | pp. 631-632 | ||||
DOI: | 10.1063/1.109972 | ||||
Status: | Peer Reviewed | ||||
Access rights to Published version: | Open Access (Creative Commons) | ||||
Funder: | Science and Engineering Research Council (Great Britain) (SERC), Great Britain. Dept. of Trade and Industry (DTI) |
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