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Thermally activated defects in float zone silicon : effect of nitrogen on the introduction of deep level states
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Mullins, Jack, Markevich, Vladimir P., Vaqueiro-Contreras, Michelle, Grant, Nicholas E., Jensen, Leif, Jabłoński, Jarosław , Murphy, John D., Halsall, Matthew P. and Peaker, Anthony R. (2018) Thermally activated defects in float zone silicon : effect of nitrogen on the introduction of deep level states. Journal of Applied Physics, 124 (3). 035701. doi:10.1063/1.5036718
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Official URL: https://doi.org/10.1063/1.5036718
Abstract
Float zone silicon (FZ-Si) is typically assumed to be an extremely high quality material, with high minority carrier lifetimes and low concentrations of recombination active defects. However, minority carrier life time in FZ-Si has previously been shown to be unstable following thermal treatments between 450 and 700 °C, with a range of unidentified deep level states being linked to reduced carrier lifetime. There are suspicions that nitrogen doping, which occurs from the growth atmosphere, and intrinsic point defects play a role in the degradation n. This study aims to address this by using deep level transient spectroscopy (DLTS), minority carrier transient spectroscopy (MCTS), Laplace DLTS, and photoluminescence lifetime measurements to study recombination active defects in nitrogen-doped and nitrogen-lean n-type FZ-Si samples. We find nitrogen-doped samples experience increased degradation due to higher concentrations of deep level defects during thermal treatments compared to nitrogen-lean samples. In an attempt to explain this difference, in-diffusion of nickel has been used as a marker to demonstrate the existence of higher vacancy concentrations in the nitrogen-doped samples. The origin of the recombination active defects responsible for the thermally induced lifetime de gradation in FZ-Si crystals is discussed
| Item Type: | Journal Article | |||||||||
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| Subjects: | Q Science > QD Chemistry | |||||||||
| Divisions: | Faculty of Science > Engineering | |||||||||
| Library of Congress Subject Headings (LCSH): | Silicon crystals, Nitrogen, Nickel | |||||||||
| Journal or Publication Title: | Journal of Applied Physics | |||||||||
| Publisher: | American Institute of Physics | |||||||||
| ISSN: | 1089-7550 | |||||||||
| Official Date: | 21 July 2018 | |||||||||
| Dates: |
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| Date of first compliant deposit: | 28 June 2018 | |||||||||
| Volume: | 124 | |||||||||
| Number: | 3 | |||||||||
| Article Number: | 035701 | |||||||||
| DOI: | 10.1063/1.5036718 | |||||||||
| Status: | Peer Reviewed | |||||||||
| Publication Status: | Published | |||||||||
| Access rights to Published version: | Open Access | |||||||||
| RIOXX Funder/Project Grant: |
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