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Thermally activated defects in float zone silicon : effect of nitrogen on the introduction of deep level states

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Mullins, Jack, Markevich, Vladimir P., Vaqueiro-Contreras, Michelle, Grant, Nicholas E., Jensen, Leif, Jabłoński, Jarosław , Murphy, John D., Halsall, Matthew P. and Peaker, Anthony R. (2018) Thermally activated defects in float zone silicon : effect of nitrogen on the introduction of deep level states. Journal of Applied Physics, 124 (3). 035701. doi:10.1063/1.5036718 ISSN 1089-7550.

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Official URL: https://doi.org/10.1063/1.5036718

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Abstract

Float zone silicon (FZ-Si) is typically assumed to be an extremely high quality material, with high minority carrier lifetimes and low concentrations of recombination active defects. However, minority carrier life time in FZ-Si has previously been shown to be unstable following thermal treatments between 450 and 700 °C, with a range of unidentified deep level states being linked to reduced carrier lifetime. There are suspicions that nitrogen doping, which occurs from the growth atmosphere, and intrinsic point defects play a role in the degradation n. This study aims to address this by using deep level transient spectroscopy (DLTS), minority carrier transient spectroscopy (MCTS), Laplace DLTS, and photoluminescence lifetime measurements to study recombination active defects in nitrogen-doped and nitrogen-lean n-type FZ-Si samples. We find nitrogen-doped samples experience increased degradation due to higher concentrations of deep level defects during thermal treatments compared to nitrogen-lean samples. In an attempt to explain this difference, in-diffusion of nickel has been used as a marker to demonstrate the existence of higher vacancy concentrations in the nitrogen-doped samples. The origin of the recombination active defects responsible for the thermally induced lifetime de gradation in FZ-Si crystals is discussed

Item Type: Journal Article
Subjects: Q Science > QD Chemistry
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Library of Congress Subject Headings (LCSH): Silicon crystals, Nitrogen, Nickel
Journal or Publication Title: Journal of Applied Physics
Publisher: American Institute of Physics
ISSN: 1089-7550
Official Date: 21 July 2018
Dates:
DateEvent
21 July 2018Published
16 July 2018Available
27 June 2018Accepted
Volume: 124
Number: 3
Article Number: 035701
DOI: 10.1063/1.5036718
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Open Access (Creative Commons)
Date of first compliant deposit: 28 June 2018
Date of first compliant Open Access: 28 June 2018
RIOXX Funder/Project Grant:
Project/Grant IDRIOXX Funder NameFunder ID
EP/J01768X/2[EPSRC] Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266
EP/M024911/1 UNSPECIFIEDUNSPECIFIED
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