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Optical properties of Si/Si0.87Ge0.13 multiple quantum well wires
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Tang, Y. S., Wilkinson, C. D. W., Sotomayor Torres, C. M., Smith, D. W., Whall, Terry E. and Parker, Evan H. C. (1993) Optical properties of Si/Si0.87Ge0.13 multiple quantum well wires. Applied Physics Letters, Vol.63 (No.4). pp. 497-499. doi:10.1063/1.109984 ISSN 0003-6951.
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Official URL: http://dx.doi.org/10.1063/1.109984
Abstract
Nanometer-scale wires cut into a Si/Si0.87Ge0.13 multiple quantum well structure were fabricated and characterized by using photoluminescence and photoreflectance at temperatures between 4 and 20 K. It was found that, in addition to a low-energy broadband emission at around 0.8 eV and other features normally observable in photoluminescence measurements, fabrication process induced strain relaxation and enhanced electron-hole droplets emission together with a new feature at 1.131 eV at 4 K were observed. The latter was further identified as a transition related to impurities located at the Si/Si0.87Ge0.13 heterointerfaces.
Item Type: | Journal Article | ||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Library of Congress Subject Headings (LCSH): | Silicon alloys, Germanium alloys, Quantum wells, Lithography, Photoluminescence | ||||
Journal or Publication Title: | Applied Physics Letters | ||||
Publisher: | American Institute of Physics | ||||
ISSN: | 0003-6951 | ||||
Official Date: | 26 July 1993 | ||||
Dates: |
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Volume: | Vol.63 | ||||
Number: | No.4 | ||||
Page Range: | pp. 497-499 | ||||
DOI: | 10.1063/1.109984 | ||||
Status: | Peer Reviewed | ||||
Access rights to Published version: | Open Access (Creative Commons) |
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