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Growth studies on Si0.8Ge0.2 channel two-dimensional hole gases
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Smith, D. W., Emeleus, C. J., Kubiak, Richard A. A., Parker, Evan H. C. and Whall, Terry E.. (1992) Growth studies on Si0.8Ge0.2 channel two-dimensional hole gases. Applied Physics Letters, Vol.61 (No.12). pp. 1453-1455. ISSN 0003-6951
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Official URL: http://dx.doi.org/10.1063/1.107515
Abstract
We report a study of the influences of MBE conditions on the low-temperature mobilities of Si/Si0.8Ge0.2 2DHG structures. A significant dependence of 2DHG mobility on growth temperature is observed with the maximum mobility of 3640 cm2 V−1 s−1 at 5.4 K being achieved at the relatively high-growth temperature of 640 °C. This dependence is associated with a reduction in interface charge density. Studies on lower mobility samples show that Cu contamination can be reduced both by growth interruptions and by modifications to the Ge source; this reduction produces improvements in the low-temperature mobilities. We suggest that interface charge deriving from residual metal contamination is currently limiting the 4-K mobility.
| Item Type: | Journal Article |
|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
| Divisions: | Faculty of Science > Physics |
| Library of Congress Subject Headings (LCSH): | Silicon alloys, Germanium alloys, Quantum wells, Electron mobility, Molecular beam epitaxy |
| Journal or Publication Title: | Applied Physics Letters |
| Publisher: | American Institute of Physics |
| ISSN: | 0003-6951 |
| Date: | 21 September 1992 |
| Volume: | Vol.61 |
| Number: | No.12 |
| Page Range: | pp. 1453-1455 |
| Identification Number: | 10.1063/1.107515 |
| Status: | Peer Reviewed |
| Access rights to Published version: | Open Access |
| Funder: | Si Towards 2000 |
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| URI: | http://wrap.warwick.ac.uk/id/eprint/1038 |
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