McQuaid, S. A., Newman, R.C., Tucker, J. H., Lightowlers, E. C., Kubiak, Richard A. A. and Goulding, M.. (1991) Concentration of atomic hydrogen diffused into silicon in the temperature range 900–1300 °C. Applied Physics Letters, Vol.58 (No.25). pp. 2933-2935. ISSN 0003-6951

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Abstract

Boron-doped Czochralski silicon samples with [B]~1017 cm−3 have been heated at various temperatures in the range 800–1300 °C in an atmosphere of hydrogen and then quenched. The concentration of [H-B] pairs was measured by infrared localized vibrational mode spectroscopy. It was concluded that the solubility of atomic hydrogen is greater than [Hs] = 5.6 × 1018 exp( − 0.95 eV/kT)cm−3 at the temperatures investigated.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics
Divisions:	Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Atomic hydrogen, Electron transport, Boron compounds, Silicon compounds, Molecular beam epitaxy
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Date:	24 June 1991
Volume:	Vol.58
Number:	No.25
Page Range:	pp. 2933-2935
Identification Number:	10.1063/1.104726
Status:	Peer Reviewed
Access rights to Published version:	Open Access
Funder:	Science and Engineering Research Council (Great Britain) (SERC)
References:	# S. J. Pearton, J. W. Corbett, and T. S. Shi, Appl. Phys. A 45, 153 (1987). # M. Stavola and S. J. Pearton, in “Hydrogen in Semiconductors,” edited by J. Pankove and N. Johnson, Semiconductors and Semimetals, Vol. 34 (Academic, Orlando, 1991). # M. Stavola, S. J. Pearton, J. Lopata, and W. C. Dautremont-Smith, Appl. Phys. Lett. 50, 1086 (1987). # F. A. Ponce, N. M. Johnson, J. C. Tramontana, and J. Walker, Inst. Phys. Conf. Ser. 87, 49 (1988). # R. Murray, A. R. Brown, and R. C. Newman, Mater. Sci. Eng. B 4, 299 (1989). # A. van Wieringen and N. Warmoltz, Physica 22, 849 (1956). # R. Murray, R. C. Newman, R. S. Leigh, R. B. Beall, J. J. Harris, M. R. Brozel, A. Mohades-Kassai, and M. Goulding, Semicond. Sci. Technol. 4, 423 (1989). # A. R. Brown, M. Claybourn, R. Murray, P. S. Nandhra, R. C. Newman, and J. H. Tucker, Semicond. Sci. Technol. 3, 591 (1988). # A. R. Brown, R. Murray, R. C. Newman, and J. H. Tucker, Mater. Res. Soc. Symp. Proc. 163, 555 (1990). # R. C. Newman, A. R. Brown, R. Murray, A. K. Tipping, and J. H. Tucker, 6th Int. Symp. on Silicon Mat. Sci. and Technol: Semiconductor Silicon, edited by H. R. Huff, K. G. Barraclough, and J. Chikawa (Electrochemical Society, Pennington, NJ, 1990), p. 734. # A. R. Brown, J. H. Tucker, R. C. Newman, and S. A. McQuaid, Proc. 20th Int. Conf. Phys. Semicond., edited by E. M. Anastassakis and J. D. Joannopoulos (World Scientific, Singapore, 1990), Vol. 1, p. 553. # G. D. Watkins, J. W. Corbett, and R. S. McDonald, J. Appl. Phys. 53, 7097 (1982). # R. C. Newman, J. H. Tucker, and F. M. Livingston, J. Phys. C 16, L151 (1983). # R. C. Newman, Proc. 20th Int. Conf. Phys. Semmicond., edited by E. M. Anastasskis and J. D. Joannopoulos (World Scientific, Singapore, 1990), Vol. 1, p. 525. # M. Stavola, J. R. Patel, L. C. Kimerling, and P. E. Freeland, Appl. Phys. Lett. 42, 73 (1983). # L. C. Kimerling (private communication, 1990). # R. E. Peale, K. Muro, and A. J. Sievers, Mater. Sci. Forum 65–66, 151 (1990).
URI:	http://wrap.warwick.ac.uk/id/eprint/1040

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