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Elemental boron doping behavior in silicon molecular beam epitaxy
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Parry, C. P., Newstead, S. M. (Simon M.), Barlow, R. D., Augustus, P. D., Kubiak, Richard A. A., Dowsett, M. G., Whall, Terry E. and Parker, Evan H. C.. (1991) Elemental boron doping behavior in silicon molecular beam epitaxy. Applied Physics Letters, Vol.58 (No.5). pp. 481-483. ISSN 0003-6951
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Official URL: http://dx.doi.org/10.1063/1.104614
Abstract
Boron-doped Si epilayers were grown by molecular beam epitaxy (MBE) using an elemental boron source, at levels up to 2×1020 cm−3, to elucidate profile control and electrical activation over the growth temperature range 450–900 °C. Precipitation and surface segregation effects were observed at doping levels of 2×1020 cm−3 for growth temperatures above 600 °C. At growth temperatures below 600 °C, excellent profile control was achieved with complete electrical activation at concentrations of 2×1020 cm−3, corresponding to the optimal MBE growth conditions for a range of Si/SixGe1−x heterostructures.
| Item Type: | Journal Article |
|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
| Divisions: | Faculty of Science > Physics |
| Library of Congress Subject Headings (LCSH): | Silicon compounds, Molecular beam epitaxy, Semiconductor doping, Boron compounds, Ion implantation |
| Journal or Publication Title: | Applied Physics Letters |
| Publisher: | American Institute of Physics |
| ISSN: | 0003-6951 |
| Date: | 4 February 1991 |
| Volume: | Vol.58 |
| Number: | No.5 |
| Page Range: | pp. 481-483 |
| Identification Number: | 10.1063/1.104614 |
| Status: | Peer Reviewed |
| Access rights to Published version: | Restricted or Subscription Access |
| References: | # R. A. A. Kubiak, W. Y. Leong, and E. H. C. Parker, J. Vac. Sci. Technol. B 3, 592 (1985). # P. Narozny, M. Hamacher, H. Dambkes, H. Kibbel, and E. Kasper, IEDM Tech. Dig. 562 (1988). # T. E. Jackman, D. C. Houghton, J. A. Jackman, M. W. Denhoff, Song Kechang, J. McCaffrey, and A. Rockett, J. Appl. Phys. 66, 1984 (1989). # T. Tatsumi, H. Hirayama, and N. Aizaki, Appl. Phys. Lett. 50, 1234 (1987). # E. de Fresart, K. L. Wang, and S. S. Rhee, Appl. Phys. Lett. 53, 48 (1988). # G. L. Vick and K. M. Whittle, J. Electrochem. Soc. 116, 1142 (1969). |
| URI: | http://wrap.warwick.ac.uk/id/eprint/1041 |
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