Parry, C. P., Newstead, S. M. (Simon M.), Barlow, R. D., Augustus, P. D., Kubiak, Richard A. A., Dowsett, M. G., Whall, Terry E. and Parker, Evan H. C. (1991) Elemental boron doping behavior in silicon molecular beam epitaxy. Applied Physics Letters, Vol.58 (No.5). pp. 481-483. doi:10.1063/1.104614 ISSN 0003-6951.

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Abstract

Boron-doped Si epilayers were grown by molecular beam epitaxy (MBE) using an elemental boron source, at levels up to 2×1020 cm−3, to elucidate profile control and electrical activation over the growth temperature range 450–900 °C. Precipitation and surface segregation effects were observed at doping levels of 2×1020 cm−3 for growth temperatures above 600 °C. At growth temperatures below 600 °C, excellent profile control was achieved with complete electrical activation at concentrations of 2×1020 cm−3, corresponding to the optimal MBE growth conditions for a range of Si/SixGe1−x heterostructures.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics
Divisions:	Faculty of Science, Engineering and Medicine > Science > Physics
Library of Congress Subject Headings (LCSH):	Silicon compounds, Molecular beam epitaxy, Semiconductor doping, Boron compounds, Ion implantation
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Official Date:	4 February 1991
Dates:	Date Event 4 February 1991 Published
Volume:	Vol.58
Number:	No.5
Page Range:	pp. 481-483
DOI:	10.1063/1.104614
Status:	Peer Reviewed
Access rights to Published version:	Restricted or Subscription Access

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