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Behavior of high dose O+-implanted Si/Ge/Si structures
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Zhang, J. P., Tang, Y. S., Robinson, A. K., Bussmann, U., Hemment, P. L. F. (Peter L. F.), Sealy, B., Newstead, S. M. (Simon M.), Powell, A. R., Whall, Terry E. and Parker, Evan H. C.. (1990) Behavior of high dose O+-implanted Si/Ge/Si structures. Applied Physics Letters, Vol.57 (No.9). pp. 890-892. ISSN 0003-6951
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Official URL: http://dx.doi.org/10.1063/1.103395
Abstract
The synthesis of a buried oxide layer in multilayer Si/Ge/Si structures by the implantation of high doses of 200 keV O+ ions is studied by Rutherford backscattering analysis. The presence of Ge is found to have a minimal effect upon the mass transport of excess oxygen and interstitial silicon. Infrared transmission spectroscopy and x-ray photoelectron spectroscopy confirm that the oxygen atoms bond preferentially to silicon forming silicon dioxide and SiOx, where x<2, with no evidence for Ge—O bonding.
| Item Type: | Journal Article |
|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
| Divisions: | Faculty of Science > Physics |
| Library of Congress Subject Headings (LCSH): | Silicon compounds, Germanium compounds, Ion implantation, Oxygen, Heterostructures, Semiconductors |
| Journal or Publication Title: | Applied Physics Letters |
| Publisher: | American Institute of Physics |
| ISSN: | 0003-6951 |
| Date: | 27 August 1990 |
| Volume: | Vol.57 |
| Number: | No.9 |
| Page Range: | pp. 890-892 |
| Identification Number: | 10.1063/1.103395 |
| Status: | Peer Reviewed |
| Access rights to Published version: | Open Access |
| Funder: | Science and Engineering Research Council (Great Britain) (SERC) |
| References: | # K. Izumi, M. Doken, and H. Ariyashi, Electron. Lett. 14, 594 (1978). # See for example, J. C. Sturm, C. K. Chen, L. Pfeiffer, and P. L. F. Hemment, eds. Proceedings of the Symposium of the Materials Research Society, Pittsburgh, 1987, (Materials Research Society, Pittsburgh, 1987), Vol. 107. # T. C. McGill, R. H. Miles, R. J. Hauenstein, and O. J. March, in Proceedings of the Second International Symposium on Si Molecular Beam Epitaxy, edited by J. C. Bean and L. J. Schowalter (Electrochemical Society, Pennington, NJ, 1988), p. 1. # P. L. F. Hemment, E. A. Maydell-Ondrusz, K. G. Stephens, J. B. Butcher, D. loannou, and J. Alderman, Nucl. Instrum. Methods 209/210, 157 (1983). # J. A. Kilner, R. J. Chater, P. L. F. Hemment, R. F. Peart, E. A. Maydell-Ondrusz, M. R. Taylor, and R. P. Arrowsmith, Nucl. Instrum. Methods Phys. S. B 7/8, 293 (1985). # U. Bussman and P. L. F. Hemment, Nucl. Instrum. Methods B 47, 22 (1990). # J. Stoemenos, Mechanisms of Buried Oxide Formation by Implanted Oxygen in Ion Implantation in Semiconductors, edited by X. Stievenard and Bourgoin (Trans. Tech. Publications, Aebermannsdorf, Switzerland, 1988), p. 115. # A. H. van Ommen, Nucl. Instrum. Methods Phys. Rev. B 39, 194 (1989). # F. K. LeGoues, R. Rosenberg, T. Nguyen, F. Himpsel, A. Taleb-IbraHimi, and B. S. Meyerson, J. Appl. Phys. 65, 1724 (1989). # G. Harbeke, E. F. Steigmeier, P. L. F. Hemment, and K. J. Reeson, Semicond. Sci. Technol. 2, 687 (1987). # G. L. Patton, S. S. Iyer, S. L. Delage, E. Ganin, and R. C. McIntosh, Proc. Symp. Mater. Res. Soc. 97, 295 (1987). |
| URI: | http://wrap.warwick.ac.uk/id/eprint/1043 |
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