Determination of the erosion rate in the transient region of an ultralow energy secondary ion mass spectrometry profile using medium energy ion scattering
UNSPECIFIED (2002) Determination of the erosion rate in the transient region of an ultralow energy secondary ion mass spectrometry profile using medium energy ion scattering. In: 29th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-29), SANTA FE, NM, JAN 06-10, 2002. Published in: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 20 (4). pp. 1690-1698.Full text not available from this repository.
Official URL: http://dx.doi.org/10.1116/1.1491987
A method which allows the erosion rate to be established from the earliest stages of an ultralow energy secondary ion mass spectrometry (ule-SIMS) profile is described. Using the technique of medium energy ion scattering (MEIS), this method provides data which enables an accurate depth scale to be established from a depth of a few nanometers onwards. The method is applicable for a thin amorphous layer at the surface or a heavy element marker in the near-surface region, and enables the erosion rate as a function of SIMS ion dose to be established for particular bombardment conditions. The erosion rate obtained is used to calibrate the depth and intensity scales of implant profile measured using ule-SIMS and to interpret the near-surface distribution. In this article we demonstrate this methodology using a Ge preamorphized Si(001) surface with a 1 keV boron implant. The altered layer formed by the primary SIMS O-2(+) incorporation and the redistribution of Ge in the samples used, are also described. Based on the Ge redistribution results, the possibility of adapting this method for determining erosion rates in crystalline silicon and silicon surface recession measurements, is also discussed. (C) 2002 American Vacuum Society.
|Item Type:||Conference Item (UNSPECIFIED)|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics
|Journal or Publication Title:||JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B|
|Publisher:||A V S AMER INST PHYSICS|
|Official Date:||July 2002|
|Number of Pages:||9|
|Page Range:||pp. 1690-1698|
|Title of Event:||29th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-29)|
|Location of Event:||SANTA FE, NM|
|Date(s) of Event:||JAN 06-10, 2002|
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