The Library
Plasmon damping in molecular beam epitaxial-grown InAs(100)
Tools
Tools
Tools
UNSPECIFIED (2002) Plasmon damping in molecular beam epitaxial-grown InAs(100). In: 29th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-29), SANTA FE, NEW MEXICO, JAN 06-10, 2002. Published in: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 20 (4). pp. 1766-1770. ISSN 1071-1023. doi:10.1116/1.1491541
Full text not available from this repository, contact author.
Official URL: http://dx.doi.org/10.1116/1.1491541
Abstract
High-resolution electron-energy-loss spectroscopy (HREELS) has been used as a noninvasive probe to investigate the plasmon excitations and accumulation layers and determine the nominal electron mobility in the near-surface region of undoped molecular beam epitaxial-grown InAs(100). HREEL spectra were recorded at 300 and 600 K, over a wide range of incident electron energies, to observe the effects of temperature on the electron mobility, carrier concentration, surface state density, accumulation layer profile, and plasmon damping mechanisms. These data have been analyzed using semiclassical dielectric theory with a three-layer model, using a simple Drude dielectric function. A separate wave-vector-dependent Landau damping term was included to allow momentum scattering to be described independently by the usual phenomenological damping term. The probing electron energy and temperature dependence of this momentum damping is used to gauge the relative contributions of surface scattering, ionized impurity scattering, and phonon scattering. By extracting the surface scattering component of the plasmon damping, bulk mobility values have been estimated and are much higher than those determined from the high probing electron energy plasmon damping parameters. The bulk electron mobilities and bulk carrier concentrations are 28 800 cm(2) v(-1) s(-1) and 2 X 10(16) cm(-3) at 300 K, respectively, and 12 900 cm(2) V-1 s(-1) and 2 X 10(17) cm(-3) at 600 K. (C) 2002 American Vacuum Society.
| Item Type: | Conference Item (UNSPECIFIED) | ||||
|---|---|---|---|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology Q Science > QC Physics |
||||
| Journal or Publication Title: | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | ||||
| Publisher: | A V S AMER INST PHYSICS | ||||
| ISSN: | 1071-1023 | ||||
| Official Date: | July 2002 | ||||
| Dates: |
|
||||
| Volume: | 20 | ||||
| Number: | 4 | ||||
| Number of Pages: | 5 | ||||
| Page Range: | pp. 1766-1770 | ||||
| DOI: | 10.1116/1.1491541 | ||||
| Publication Status: | Published | ||||
| Title of Event: | 29th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-29) | ||||
| Location of Event: | SANTA FE, NEW MEXICO | ||||
| Date(s) of Event: | JAN 06-10, 2002 |
Data sourced from Thomson Reuters' Web of Knowledge
Request changes or add full text files to a record
Repository staff actions (login required)
 |
View Item |
