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Formation of Mn5Ge3 by thermal annealing of evaporated Mn on doped Ge on Si(111)
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Bechler, Stefan, Kern, Michal, Funk, Hannes Simon, Colston, Gerard, Fischer, Inga Anita, Weißhaupt, David, Myronov, Maksym, van Slageren, Joris and Schulze, Jörg (2018) Formation of Mn5Ge3 by thermal annealing of evaporated Mn on doped Ge on Si(111). Semiconductor Science and Technology, 33 (9). 095008. doi:10.1088/1361-6641/aad4cf ISSN 1361-6641.
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Official URL: https://doi.org/10.1088/1361-6641/aad4cf
Abstract
Mn5Ge3 can be used as a ferromagnetic contact material to fabricate spintronic devices. Here, we show that Mn5Ge3 can be fabricated with a simple germanidation process by evaporating Mn on undoped and doped Ge on Si followed by a thermal annealing step to form the ferromagnetic Mn5Ge3 phase. This solid phase preparation of Mn5Ge3 is a robust process with a minor dependence on the annealing parameters. The formation of Mn5Ge3 can be realized using undoped as well as highly doped p-Ge and n-Ge with different doping levels. The interface of Mn5Ge3 is atomically sharp which leads to very low contact resistivities < 1 × 10−7 Ω cm2.
Item Type: | Journal Article | ||||||||
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||||||
SWORD Depositor: | Library Publications Router | ||||||||
Journal or Publication Title: | Semiconductor Science and Technology | ||||||||
Publisher: | IOP Publishing | ||||||||
ISSN: | 1361-6641 | ||||||||
Official Date: | September 2018 | ||||||||
Dates: |
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Volume: | 33 | ||||||||
Number: | 9 | ||||||||
Article Number: | 095008 | ||||||||
DOI: | 10.1088/1361-6641/aad4cf | ||||||||
Status: | Peer Reviewed | ||||||||
Publication Status: | Published | ||||||||
Access rights to Published version: | Restricted or Subscription Access | ||||||||
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