Analyis of hole mobility and strain in a Si/Si0.5Ge0.5/Si metal oxide semiconductor field effect transistor
UNSPECIFIED. (2002) Analyis of hole mobility and strain in a Si/Si0.5Ge0.5/Si metal oxide semiconductor field effect transistor. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 17 (7). pp. 708-715. ISSN 0268-1242Full text not available from this repository.
The hole mobility has been measured in a metal-oxide semiconductor field-effect transistor featuring a 6 nm Si0.5Ge0.5 conduction channel. Physical characterization and analysis of the electrical properties confirm that the channel is fully strained. At a total sheet carrier concentration, PS, of 10(12) cm(-2), the 300 K mobility of 220 cm(2) V-1 s(-1) is double that of a Si control device (and at 4 K has a peak value of 1800 cm(-2) V-1 s(-1)). This improvement is largely maintained up to p(s) similar to 10(13) cm(-2) , despite the onset of conduction in a parallel Si channel at the oxide interface. Comparing the measurements with calculations suggests that the mobility is affected more strongly by interface toughness than by alloy scattering.
|Item Type:||Journal Article|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering
T Technology > TA Engineering (General). Civil engineering (General)
Q Science > QC Physics
|Journal or Publication Title:||SEMICONDUCTOR SCIENCE AND TECHNOLOGY|
|Publisher:||IOP PUBLISHING LTD|
|Official Date:||July 2002|
|Number of Pages:||8|
|Page Range:||pp. 708-715|
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