The Library
Analyis of hole mobility and strain in a Si/Si0.5Ge0.5/Si metal oxide semiconductor field effect transistor
Tools
Tools
Tools
UNSPECIFIED (2002) Analyis of hole mobility and strain in a Si/Si0.5Ge0.5/Si metal oxide semiconductor field effect transistor. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 17 (7). pp. 708-715.
Research output not available from this repository, contact author.Abstract
The hole mobility has been measured in a metal-oxide semiconductor field-effect transistor featuring a 6 nm Si0.5Ge0.5 conduction channel. Physical characterization and analysis of the electrical properties confirm that the channel is fully strained. At a total sheet carrier concentration, PS, of 10(12) cm(-2), the 300 K mobility of 220 cm(2) V-1 s(-1) is double that of a Si control device (and at 4 K has a peak value of 1800 cm(-2) V-1 s(-1)). This improvement is largely maintained up to p(s) similar to 10(13) cm(-2) , despite the onset of conduction in a parallel Si channel at the oxide interface. Comparing the measurements with calculations suggests that the mobility is affected more strongly by interface toughness than by alloy scattering.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics |
||||
| Journal or Publication Title: | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | ||||
| Publisher: | IOP PUBLISHING LTD | ||||
| ISSN: | 0268-1242 | ||||
| Official Date: | July 2002 | ||||
| Dates: |
|
||||
| Volume: | 17 | ||||
| Number: | 7 | ||||
| Number of Pages: | 8 | ||||
| Page Range: | pp. 708-715 | ||||
| Publication Status: | Published |
Data sourced from Thomson Reuters' Web of Knowledge
Request changes or add full text files to a record
Repository staff actions (login required)
 |
View Item |
