UNSPECIFIED. (2002) Analyis of hole mobility and strain in a Si/Si0.5Ge0.5/Si metal oxide semiconductor field effect transistor. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 17 (7). pp. 708-715. ISSN 0268-1242

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Abstract

The hole mobility has been measured in a metal-oxide semiconductor field-effect transistor featuring a 6 nm Si0.5Ge0.5 conduction channel. Physical characterization and analysis of the electrical properties confirm that the channel is fully strained. At a total sheet carrier concentration, PS, of 10(12) cm(-2), the 300 K mobility of 220 cm(2) V-1 s(-1) is double that of a Si control device (and at 4 K has a peak value of 1800 cm(-2) V-1 s(-1)). This improvement is largely maintained up to p(s) similar to 10(13) cm(-2) , despite the onset of conduction in a parallel Si channel at the oxide interface. Comparing the measurements with calculations suggests that the mobility is affected more strongly by interface toughness than by alloy scattering.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics
Journal or Publication Title:	SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Publisher:	IOP PUBLISHING LTD
ISSN:	0268-1242
Official Date:	July 2002
Dates:	Date Event July 2002 UNSPECIFIED
Volume:	17
Number:	7
Number of Pages:	8
Page Range:	pp. 708-715
Publication Status:	Published
URI:	http://wrap.warwick.ac.uk/id/eprint/10703

Data sourced from Thomson Reuters' Web of Knowledge

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