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Electromagnetic functionalization of wide-bandgap dielectric oxides by boron interstitial doping

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Park, Dae-Sung, Rees, Gregory J., Wang, Haiyuan, Rata, Diana, Morris, Andrew J., Maznichenko, Igor V., Ostanin, Sergey, Bhatnagar, Akash, Choi, Chel-Jong, Jónsson, Ragnar D. B. et al.
(2018) Electromagnetic functionalization of wide-bandgap dielectric oxides by boron interstitial doping. Advanced Materials, 30 (39). 1802025. doi:10.1002/adma.201802025 ISSN 0935-9648.

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Official URL: http://dx.doi.org/10.1002/adma.201802025

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Abstract

A surge in interest of oxide‐based materials is testimony for their potential utility in a wide array of device applications and offers a fascinating landscape for tuning the functional properties through a variety of physical and chemical parameters. In particular, selective electronic/defect doping has been demonstrated to be vital in tailoring novel functionalities, not existing in the bulk host oxides. Here, an extraordinary interstitial doping effect is demonstrated centered around a light element, boron (B). The host matrix is a novel composite system, made from discrete bulk LaAlO3:LaBO3 compounds. The findings show a spontaneous ordering of the interstitial B cations within the host LaAlO3 lattices, and subsequent spin‐polarized charge injection into the neighboring cations. This leads to a series of remarkable cation‐dominated electrical switching and high‐temperature ferromagnetism. Hence, the induced interstitial doping serves to transform a nonmagnetic insulating bulk oxide into a ferromagnetic ionic–electronic conductor. This unique interstitial B doping effect upon its control is proposed to be as a general route for extracting/modifying multifunctional properties in bulk oxides utilized in energy and spin‐based applications.

Item Type: Journal Article
Subjects: Q Science > QC Physics
Divisions: Faculty of Science, Engineering and Medicine > Science > Physics
Library of Congress Subject Headings (LCSH): Wide gap semiconductors, Semiconductor doping, Oxides, Boron, Cations
Journal or Publication Title: Advanced Materials
Publisher: Wiley - V C H Verlag
ISSN: 0935-9648
Official Date: 26 September 2018
Dates:
DateEvent
26 September 2018Published
21 August 2018Available
5 July 2018Accepted
Volume: 30
Number: 39
Article Number: 1802025
DOI: 10.1002/adma.201802025
Status: Peer Reviewed
Publication Status: Published
Reuse Statement (publisher, data, author rights): "This is the pre-peer reviewed version of the following article: Park, Dae-Sung, Rees, Gregory J., Wang, Haiyuan, Rata, Diana, Morris, Andrew J., Maznichenko, Igor V., Ostanin, Sergey, Bhatnagar, Akash, Choi, Chel-Jong, Jónsson, Ragnar D. B., Kaufmann, Kai, Kashtiban, Reza J., Walker, Marc, Chiang, Cheng-Tien, Thorsteinsson, Einar B., Luo, Zhengdong, Park, In-Sung, Hanna, John V., Mertig, Ingrid, Dörr, Kathrin, Gíslason, Hafliði P. and McConville, C. F. (Chris F.) (2018) Electromagnetic functionalization of wide-bandgap dielectric oxides by boron interstitial doping. Advanced Materials, 1802025. which has been published in final form at http://dx.doi.org/10.1002/adma.201802025 This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions."
Access rights to Published version: Restricted or Subscription Access
Date of first compliant deposit: 24 August 2018
Date of first compliant Open Access: 21 August 2019
RIOXX Funder/Project Grant:
Project/Grant IDRIOXX Funder NameFunder ID
SFB 762 (Grant no. A12)[DFG] Deutsche Forschungsgemeinschafthttp://dx.doi.org/10.13039/501100001659
Grant no. 03Z22HN12Bundesministerium für Bildung und Forschunghttp://dx.doi.org/10.13039/501100002347

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