UNSPECIFIED (2001) Energy filtered TEM analyses of Ge snowploughing during oxidation of SiGe/Si MOSFET device structures. In: Royal-Microscopical-Society Conference on Microscopy of Semiconducting Materials, MAR 25-29, 2001, UNIV OXFORD, OXFORD, ENGLAND.

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Abstract

Energy filtered transmission electron microscopy has been used to investigate the effects of oxidation of SiGe/Si pseudomorphic MOSFET test structures. In particular, it will be demonstrated that Ge is found to accumulate or be 'snow-ploughed' to the Si/SiO2 interface during Si-cap oxidation. Moreover, the concentration of Ge confined to this interface is found to be an order of magnitude greater than suggested by previous measurements made by SIMS. Such an enriched Ge layer is entirely consistent with theoretical predictions based of segregation modelling of the Ge distribution in such alloy layers.

Item Type:	Conference Item (UNSPECIFIED)
Subjects:	Q Science > QC Physics
Series Name:	INSTITUTE OF PHYSICS CONFERENCE SERIES
Journal or Publication Title:	MICROSCOPY OF SEMICONDUCTING MATERIALS 2001
Publisher:	IOP PUBLISHING LTD
ISBN:	0-7503-0818-4
ISSN:	0951-3248
Editor:	Cullis, AG and Hutchison, JL
Date:	2001
Number:	169
Number of Pages:	4
Page Range:	pp. 185-188
Publication Status:	Published
Title of Event:	Royal-Microscopical-Society Conference on Microscopy of Semiconducting Materials
Location of Event:	UNIV OXFORD, OXFORD, ENGLAND
Date(s) of Event:	MAR 25-29, 2001
URI:	http://wrap.warwick.ac.uk/id/eprint/10811

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