Energy filtered TEM analyses of Ge snowploughing during oxidation of SiGe/Si MOSFET device structures
UNSPECIFIED (2001) Energy filtered TEM analyses of Ge snowploughing during oxidation of SiGe/Si MOSFET device structures. In: Royal-Microscopical-Society Conference on Microscopy of Semiconducting Materials, MAR 25-29, 2001, UNIV OXFORD, OXFORD, ENGLAND.Full text not available from this repository.
Energy filtered transmission electron microscopy has been used to investigate the effects of oxidation of SiGe/Si pseudomorphic MOSFET test structures. In particular, it will be demonstrated that Ge is found to accumulate or be 'snow-ploughed' to the Si/SiO2 interface during Si-cap oxidation. Moreover, the concentration of Ge confined to this interface is found to be an order of magnitude greater than suggested by previous measurements made by SIMS. Such an enriched Ge layer is entirely consistent with theoretical predictions based of segregation modelling of the Ge distribution in such alloy layers.
|Item Type:||Conference Item (UNSPECIFIED)|
|Subjects:||Q Science > QC Physics|
|Series Name:||INSTITUTE OF PHYSICS CONFERENCE SERIES|
|Journal or Publication Title:||MICROSCOPY OF SEMICONDUCTING MATERIALS 2001|
|Publisher:||IOP PUBLISHING LTD|
|Editor:||Cullis, AG and Hutchison, JL|
|Number of Pages:||4|
|Page Range:||pp. 185-188|
|Title of Event:||Royal-Microscopical-Society Conference on Microscopy of Semiconducting Materials|
|Location of Event:||UNIV OXFORD, OXFORD, ENGLAND|
|Date(s) of Event:||MAR 25-29, 2001|
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