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A novel non-intrusive technique for BTI characterization in SiC MOSFETs

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Ortiz Gonzalez, Jose Angel and Alatise, Olayiwola M. (2019) A novel non-intrusive technique for BTI characterization in SiC MOSFETs. IEEE Transactions on Power Electronics, 34 (6). pp. 5737-5747. doi:10.1109/TPEL.2018.2870067 ISSN 0885-8993.

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Official URL: http://dx.doi.org/10.1109/TPEL.2018.2870067

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Abstract

Threshold voltage ( $V_{TH}$ ) shift due to Bias Temperature Instability (BTI) is a well-known problem in SiC-MOSFETs that occurs due to oxide traps in the $SiC/SiO_2$ gate interface. The reduced band offsets and increased interface/fixed oxide traps in SiC-MOSFETs makes this a more critical problem compared to silicon. Before qualification, power devices are subjected to gate bias stress tests after which $V_{TH}$ shift is monitored. However, some recovery occurs between the end of the stress and $V_{TH}$ characterisation, thereby potentially under-estimating the extent of the problem. In applications where the SiC-MOSFET is turned OFF with a negative bias at high temperature, if $V_{TH}$ shift is severe enough there may be electrothermal failure due to current crowding since parallel devices lose synchronization during turn-ON. In this paper, a novel method that uses the forward voltage of the body diode during reverse conduction of a small sensing current is introduced as a technique for monitoring $V_{TH}$ shift and recovery due to BTI. This non-invasive method exploits the increased body effect that is peculiar SiC-MOSFETs due to the higher body diode forward voltage. With the proposed method, it is possible to non-invasively assess $V_{TH}$ shift dynamically during BTI characterization tests.

Item Type: Journal Article
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Library of Congress Subject Headings (LCSH): Metal oxide semiconductor field-effect transistors, Temperature control, Metal oxide semiconductor field-effect transistors -- Reliability, Silicon carbide -- Oxidation
Journal or Publication Title: IEEE Transactions on Power Electronics
Publisher: IEEE
ISSN: 0885-8993
Official Date: June 2019
Dates:
DateEvent
June 2019Published
13 September 2018Available
29 August 2018Accepted
Volume: 34
Number: 6
Page Range: pp. 5737-5747
DOI: 10.1109/TPEL.2018.2870067
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Date of first compliant deposit: 27 September 2018
Date of first compliant Open Access: 27 September 2018
RIOXX Funder/Project Grant:
Project/Grant IDRIOXX Funder NameFunder ID
EP/R004366/1[EPSRC] Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266

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