The Library
A novel non-intrusive technique for BTI characterization in SiC MOSFETs
Tools
Ortiz Gonzalez, Jose Angel and Alatise, Olayiwola M. (2019) A novel non-intrusive technique for BTI characterization in SiC MOSFETs. IEEE Transactions on Power Electronics, 34 (6). pp. 5737-5747. doi:10.1109/TPEL.2018.2870067 ISSN 0885-8993.
|
PDF
WRAP-novel-non-intrusive-technique-BTI-characterization-SiC-MOSFETs-Ortiz-Gonzalez-2018.pdf - Published Version - Requires a PDF viewer. Available under License Creative Commons Attribution. Download (3748Kb) | Preview |
|
PDF
WRAP-novel-non-intrusive-technique-characterisation-Gonzalez-2018.pdf - Accepted Version Embargoed item. Restricted access to Repository staff only - Requires a PDF viewer. Download (4079Kb) |
Official URL: http://dx.doi.org/10.1109/TPEL.2018.2870067
Abstract
Threshold voltage ( $V_{TH}$ ) shift due to Bias Temperature Instability (BTI) is a well-known problem in SiC-MOSFETs that occurs due to oxide traps in the $SiC/SiO_2$ gate interface. The reduced band offsets and increased interface/fixed oxide traps in SiC-MOSFETs makes this a more critical problem compared to silicon. Before qualification, power devices are subjected to gate bias stress tests after which $V_{TH}$ shift is monitored. However, some recovery occurs between the end of the stress and $V_{TH}$ characterisation, thereby potentially under-estimating the extent of the problem. In applications where the SiC-MOSFET is turned OFF with a negative bias at high temperature, if $V_{TH}$ shift is severe enough there may be electrothermal failure due to current crowding since parallel devices lose synchronization during turn-ON. In this paper, a novel method that uses the forward voltage of the body diode during reverse conduction of a small sensing current is introduced as a technique for monitoring $V_{TH}$ shift and recovery due to BTI. This non-invasive method exploits the increased body effect that is peculiar SiC-MOSFETs due to the higher body diode forward voltage. With the proposed method, it is possible to non-invasively assess $V_{TH}$ shift dynamically during BTI characterization tests.
Item Type: | Journal Article | ||||||||
---|---|---|---|---|---|---|---|---|---|
Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||||||
Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||||
Library of Congress Subject Headings (LCSH): | Metal oxide semiconductor field-effect transistors, Temperature control, Metal oxide semiconductor field-effect transistors -- Reliability, Silicon carbide -- Oxidation | ||||||||
Journal or Publication Title: | IEEE Transactions on Power Electronics | ||||||||
Publisher: | IEEE | ||||||||
ISSN: | 0885-8993 | ||||||||
Official Date: | June 2019 | ||||||||
Dates: |
|
||||||||
Volume: | 34 | ||||||||
Number: | 6 | ||||||||
Page Range: | pp. 5737-5747 | ||||||||
DOI: | 10.1109/TPEL.2018.2870067 | ||||||||
Status: | Peer Reviewed | ||||||||
Publication Status: | Published | ||||||||
Access rights to Published version: | Restricted or Subscription Access | ||||||||
Date of first compliant deposit: | 27 September 2018 | ||||||||
Date of first compliant Open Access: | 27 September 2018 | ||||||||
RIOXX Funder/Project Grant: |
|
Request changes or add full text files to a record
Repository staff actions (login required)
View Item |
Downloads
Downloads per month over past year