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A novel non-intrusive technique for BTI characterization in SiC MOSFETs
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Ortiz Gonzalez, Jose Angel and Alatise, Olayiwola M. (2019) A novel non-intrusive technique for BTI characterization in SiC MOSFETs. IEEE Transactions on Power Electronics, 34 (6). pp. 5737-5747. doi:10.1109/TPEL.2018.2870067 ISSN 0885-8993.
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Official URL: http://dx.doi.org/10.1109/TPEL.2018.2870067
Abstract
Threshold voltage ( $V_{TH}$ ) shift due to Bias Temperature Instability (BTI) is a well-known problem in SiC-MOSFETs that occurs due to oxide traps in the $SiC/SiO_2$ gate interface. The reduced band offsets and increased interface/fixed oxide traps in SiC-MOSFETs makes this a more critical problem compared to silicon. Before qualification, power devices are subjected to gate bias stress tests after which $V_{TH}$ shift is monitored. However, some recovery occurs between the end of the stress and $V_{TH}$ characterisation, thereby potentially under-estimating the extent of the problem. In applications where the SiC-MOSFET is turned OFF with a negative bias at high temperature, if $V_{TH}$ shift is severe enough there may be electrothermal failure due to current crowding since parallel devices lose synchronization during turn-ON. In this paper, a novel method that uses the forward voltage of the body diode during reverse conduction of a small sensing current is introduced as a technique for monitoring $V_{TH}$ shift and recovery due to BTI. This non-invasive method exploits the increased body effect that is peculiar SiC-MOSFETs due to the higher body diode forward voltage. With the proposed method, it is possible to non-invasively assess $V_{TH}$ shift dynamically during BTI characterization tests.
| Item Type: | Journal Article | ||||||||
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| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||||||
| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||||
| Library of Congress Subject Headings (LCSH): | Metal oxide semiconductor field-effect transistors, Temperature control, Metal oxide semiconductor field-effect transistors -- Reliability, Silicon carbide -- Oxidation | ||||||||
| Journal or Publication Title: | IEEE Transactions on Power Electronics | ||||||||
| Publisher: | IEEE | ||||||||
| ISSN: | 0885-8993 | ||||||||
| Official Date: | June 2019 | ||||||||
| Dates: |
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| Volume: | 34 | ||||||||
| Number: | 6 | ||||||||
| Page Range: | pp. 5737-5747 | ||||||||
| DOI: | 10.1109/TPEL.2018.2870067 | ||||||||
| Status: | Peer Reviewed | ||||||||
| Publication Status: | Published | ||||||||
| Access rights to Published version: | Restricted or Subscription Access | ||||||||
| Date of first compliant deposit: | 27 September 2018 | ||||||||
| Date of first compliant Open Access: | 27 September 2018 | ||||||||
| RIOXX Funder/Project Grant: |
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