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The effects of doping density and temperature on the optoelectronic properties of formamidinium tin triiodide thin films
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Milot, Rebecca, Klug, Matthew T., Davies, Christopher L., Wang, Zhiping, Kraus, Hans, Snaith, Henry J., Johnston, Michael B. and Herz, Laura M. (2018) The effects of doping density and temperature on the optoelectronic properties of formamidinium tin triiodide thin films. Advanced Materials . 1804506. doi:10.1002/adma.201804506 ISSN 0935-9648.
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Official URL: https://doi.org/10.1002/adma.201804506
Abstract
Optoelectronic properties are unraveled for formamidinium tin triiodide (FASnI3) thin films, whose background hole doping density is varied through SnF2 addition during film fabrication. Monomolecular charge‐carrier recombination exhibits both a dopant‐mediated part that grows linearly with hole doping density and remnant contributions that remain under tin‐enriched processing conditions. At hole densities near 1020 cm−3, a strong Burstein–Moss effect increases absorption onset energies by ≈300 meV beyond the bandgap energy of undoped FASnI3 (shown to be 1.2 eV at 5 K and 1.35 eV at room temperature). At very high doping densities (1020 cm−3), temperature‐dependent measurements indicate that the effective charge‐carrier mobility is suppressed through scattering with ionized dopants. Once the background hole concentration is nearer 1019 cm−3 and below, the charge‐carrier mobility increases with decreasing temperature according to ≈T−1.2, suggesting that it is limited mostly by intrinsic interactions with lattice vibrations. For the lowest doping concentration of 7.2 × 1018 cm−3, charge‐carrier mobilities reach a value of 67 cm2 V−1 s−1 at room temperature and 470 cm2 V−1 s−1 at 50 K. Intraexcitonic transitions observed in the THz‐frequency photoconductivity spectra at 5 K reveal an exciton binding energy of only 3.1 meV for FASnI3, in agreement with the low bandgap energy exhibited by this perovskite.
| Item Type: | Journal Article | ||||||
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| Subjects: | Q Science > QC Physics | ||||||
| Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||||
| SWORD Depositor: | Library Publications Router | ||||||
| Library of Congress Subject Headings (LCSH): | Thin films, Perovskite -- Industrial applications, Optoelectronic devices, Semiconductors | ||||||
| Journal or Publication Title: | Advanced Materials | ||||||
| Publisher: | Wiley - V C H Verlag GmbH & Co. KGaA | ||||||
| ISSN: | 0935-9648 | ||||||
| Official Date: | 17 September 2018 | ||||||
| Dates: |
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| Article Number: | 1804506 | ||||||
| DOI: | 10.1002/adma.201804506 | ||||||
| Status: | Peer Reviewed | ||||||
| Publication Status: | Published | ||||||
| Access rights to Published version: | Open Access (Creative Commons) | ||||||
| Date of first compliant deposit: | 5 October 2018 | ||||||
| Date of first compliant Open Access: | 5 October 2018 | ||||||
| RIOXX Funder/Project Grant: |
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