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Bias temperature instability and condition monitoring in SiC power MOSFETs

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Ortiz Gonzalez, Jose Angel and Alatise, Olayiwola M. (2018) Bias temperature instability and condition monitoring in SiC power MOSFETs. Microelectronics Reliability, 88-90 . pp. 557-562. doi:10.1016/j.microrel.2018.06.045 ISSN 0026-2714.

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Official URL: http://dx.doi.org/10.1016/j.microrel.2018.06.045

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Abstract

Threshold voltage shift due to bias temperature instability (BTI) is a major concern in SiC power MOSFETs. The SiC/SiO2 gate dielectric interface is typically characterized by a higher density of interface traps compared to the conventional Si/SiO2 interface. The threshold voltage shift that arises from BTI has significant implications on the reliability of SiC power MOSFETs, hence, techniques for detecting the change in electrical parameters due to gate oxide degradation are desirable. Using accelerated high temperature gate bias stress tests on SiC MOSFETs, it has been shown that the output and transfer characteristics are affected by BTI. This paper presents the impact BTI induced threshold voltage shift on the forward voltage of the SiC MOSFET body diode during third quadrant operation. Using the forward voltage of the body diode during reverse conduction of low currents, threshold voltage shift can be detected, hence, the impact of BTI can be evaluated. The implications of the body diode forward voltage shift on junction temperature measurements are also studied in the context of TSEPs. The findings in this paper are important for engineers seeking to implement condition and health monitoring techniques on SiC power devices.

Item Type: Journal Article
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Library of Congress Subject Headings (LCSH): Metal oxide semiconductor field-effect transistors, Silicon carbide -- Industrial applications
Journal or Publication Title: Microelectronics Reliability
Publisher: Pergamon-Elsevier Science Ltd.
ISSN: 0026-2714
Official Date: September 2018
Dates:
DateEvent
September 2018Published
30 September 2018Available
25 June 2018Accepted
Volume: 88-90
Page Range: pp. 557-562
DOI: 10.1016/j.microrel.2018.06.045
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Date of first compliant deposit: 4 October 2018
Date of first compliant Open Access: 30 September 2019
RIOXX Funder/Project Grant:
Project/Grant IDRIOXX Funder NameFunder ID
EP/R004366/1[EPSRC] Engineering and Physical Sciences Research Councilhttp://dx.doi.org/10.13039/501100000266

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