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Bias temperature instability and condition monitoring in SiC power MOSFETs
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Ortiz Gonzalez, Jose Angel and Alatise, Olayiwola M. (2018) Bias temperature instability and condition monitoring in SiC power MOSFETs. Microelectronics Reliability, 88-90 . pp. 557-562. doi:10.1016/j.microrel.2018.06.045
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WRAP-bias-temperature-instability-condition-SiC-power-Gonzalez-2018.pdf - Accepted Version - Requires a PDF viewer. Available under License Creative Commons Attribution Non-commercial No Derivatives 4.0. Download (1726Kb) | Preview |
Official URL: http://dx.doi.org/10.1016/j.microrel.2018.06.045
Abstract
Threshold voltage shift due to bias temperature instability (BTI) is a major concern in SiC power MOSFETs. The SiC/SiO2 gate dielectric interface is typically characterized by a higher density of interface traps compared to the conventional Si/SiO2 interface. The threshold voltage shift that arises from BTI has significant implications on the reliability of SiC power MOSFETs, hence, techniques for detecting the change in electrical parameters due to gate oxide degradation are desirable. Using accelerated high temperature gate bias stress tests on SiC MOSFETs, it has been shown that the output and transfer characteristics are affected by BTI. This paper presents the impact BTI induced threshold voltage shift on the forward voltage of the SiC MOSFET body diode during third quadrant operation. Using the forward voltage of the body diode during reverse conduction of low currents, threshold voltage shift can be detected, hence, the impact of BTI can be evaluated. The implications of the body diode forward voltage shift on junction temperature measurements are also studied in the context of TSEPs. The findings in this paper are important for engineers seeking to implement condition and health monitoring techniques on SiC power devices.
| Item Type: | Journal Article | ||||||||
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| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||||||
| Divisions: | Faculty of Science > Engineering | ||||||||
| Library of Congress Subject Headings (LCSH): | Metal oxide semiconductor field-effect transistors, Silicon carbide -- Industrial applications | ||||||||
| Journal or Publication Title: | Microelectronics Reliability | ||||||||
| Publisher: | Pergamon-Elsevier Science Ltd. | ||||||||
| ISSN: | 0026-2714 | ||||||||
| Official Date: | September 2018 | ||||||||
| Dates: |
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| Date of first compliant deposit: | 4 October 2018 | ||||||||
| Volume: | 88-90 | ||||||||
| Page Range: | pp. 557-562 | ||||||||
| DOI: | 10.1016/j.microrel.2018.06.045 | ||||||||
| Status: | Peer Reviewed | ||||||||
| Publication Status: | Published | ||||||||
| Access rights to Published version: | Restricted or Subscription Access | ||||||||
| RIOXX Funder/Project Grant: |
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