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Low intrinsic carrier density LSMO/Alq3/AlOx/Co organic spintronic devices
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Riminucci, Alberto, Graziosi, Patrizio, Calbucci, Marco, Cecchini, Raimondo, Prezioso, Mirko, Borgatti, Francesco, Bergenti, Ilaria and Dediu, Valentin Alek (2018) Low intrinsic carrier density LSMO/Alq3/AlOx/Co organic spintronic devices. Applied Physics Letters, 112 (14). 142401. doi:10.1063/1.5006387 ISSN 0003-6951.
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Official URL: http://dx.doi.org/10.1063/1.5006387
Abstract
The understanding of spin injection and transport in organic spintronic devices is still incomplete, with some experiments showing magnetoresistance and others not detecting it. We have investigated the transport properties of a large number of tris-(8-hydroxyquinoline)aluminum-based organic spintronic devices with an electrical resistance greater than 5 MΩ that did not show magnetoresistance. Their transport properties could be described satisfactorily by known models for organic semiconductors. At high voltages (>2 V), the results followed the model of space charge limited current with a Poole-Frenkel mobility. At low voltages (∼0.1 V), that are those at which the spin valve behavior is usually observed, the charge transport was modelled by nearest neighbor hopping in intra-gap impurity levels, with a charge carrier density of n0 = (1.44 ± 0.21) × 1015 cm−3 at room temperature. Such a low carrier density can explain why no magnetoresistance was observed.
Item Type: | Journal Article | ||||||
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Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||
Journal or Publication Title: | Applied Physics Letters | ||||||
Publisher: | American Institute of Physics | ||||||
ISSN: | 0003-6951 | ||||||
Official Date: | 2018 | ||||||
Dates: |
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Volume: | 112 | ||||||
Number: | 14 | ||||||
Article Number: | 142401 | ||||||
DOI: | 10.1063/1.5006387 | ||||||
Status: | Peer Reviewed | ||||||
Publication Status: | Published | ||||||
Access rights to Published version: | Restricted or Subscription Access |
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