Cooke, Graham Alan (1992) The development of secondary ion mass spectrometry for two-dimensional impurity profiling in semiconductors. PhD thesis, University of Warwick.

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Abstract

As the dimensions of devices on integrated circuits are reduced, the importance of lateral spreading of implanted impurities increases. To maintain inter-device isolation and predictable performance, knowledge of the extent and concentration of these regions is necessary. A number of computer models have been produced to predict this information, however there is a serious lack of experimental data with which to verify their results.

Secondary Ion Mass Spectrometry (SIMS) has been used for many years to provide depth profiles with high sensitivity and depth resolution, however, direct application of SIMS will not yield multi-dimensional results with enough spatial resolution and sensitivity to be useful. This is because the analyte volume is very limited.

This thesis describe the development of a technique that increases the volume available for analysis by means of a special sample. The sample geometry introduces an inherent magnification that permits the use of a relatively large, low energy, reactive ion probe. This in tum provides high sensitivity - due to enhanced secondary ion yields - and good depth resolution - due to the low range of the probe.

Using a quadrupole SIMS instrument, and a 50 μm FWHM oxygen probe, spatial resolutions of less than 70 nm have been demonstrated with a sensitivity of better than 10¹⁷ atoms cm³ for boron implants in silicon.

Item Type:	Thesis or Dissertation (PhD)
Subjects:	Q Science > QC Physics
Library of Congress Subject Headings (LCSH):	Secondary ion mass spectrometry, Semiconductors -- Impurity distribution, Semiconductors -- Analysis, Ion implantation
Official Date:	July 1992
Dates:	Date Event July 1992 Submitted
Institution:	University of Warwick
Theses Department:	Department of Physics
Thesis Type:	PhD
Publication Status:	Unpublished
Supervisor(s)/Advisor:	Dowsett, M. G.
Sponsors:	Science and Engineering Research Council (Great Britain) ; Plessey Company
Format of File:	pdf
Extent:	xv, 191 leaves : illustrations, charts
Language:	eng

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