Hall mobility enhancement caused by annealing of Si0.2Ge0.8/Si0.7Ge0.3/Si(001) p-type modulation-doped heterostructures
UNSPECIFIED. (2002) Hall mobility enhancement caused by annealing of Si0.2Ge0.8/Si0.7Ge0.3/Si(001) p-type modulation-doped heterostructures. APPLIED PHYSICS LETTERS, 80 (19). pp. 3557-3559. ISSN 0003-6951Full text not available from this repository.
Official URL: http://dx.doi.org/10.1063/1.1478779
The effect of post-growth furnace thermal annealing (FTA) on the Hall mobility and sheet carrier density measured at 9-300 K in the Si0.2Ge0.8/Si0.7Ge0.3/Si(001) p-type modulation-doped heterostructures was studied. FTA treatments in the temperature range of 600-900 degreesC for 30 min were performed on similar heterostructures but with two Si0.2Ge0.8 channel thicknesses. The annealing at 600 degreesC is seen to have a negligible effect on the Hall mobility as well as on the sheet carrier density. Increases in the annealing temperature resulted in pronounced successive increases of the mobility. For both samples the maximum Hall mobility was observed after FTA at 750 degreesC. Further increases of the annealing temperature resulted in a decrease in mobility. The sheet carrier density showed the opposite behavior with an increase in annealing temperature. The mechanism causing this behavior is discussed. Structural characterization of as-grown and annealed samples was done by cross-sectional transmission electron microscopy. (C) 2002 American Institute of Physics.
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||APPLIED PHYSICS LETTERS|
|Publisher:||AMER INST PHYSICS|
|Official Date:||13 May 2002|
|Number of Pages:||3|
|Page Range:||pp. 3557-3559|
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