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Establishing an accurate depth-scale calibration in the top few nanometers of an ultrashallow implant profile

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UNSPECIFIED (2002) Establishing an accurate depth-scale calibration in the top few nanometers of an ultrashallow implant profile. PHYSICAL REVIEW B, 65 (11). -. doi:10.1103/PhysRevB.65.113412 ISSN 1098-0121.

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Official URL: http://dx.doi.org/10.1103/PhysRevB.65.113412

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Abstract

A method to accurately determine the sputter yield of the matrix from the earliest stages of a sputter profile is described. Using the technique of medium-energy ion-scattering spectroscopy, this method provides data that enable a depth scale to be established from subnanometer depths onward. It may be adapted to samples containing a thin amorphous surface layer (e.g., a preamorphized shallow implant) or to crystalline surfaces containing a heavy-element marker layer. In this Brief Report we have used this method to interpret the near-surface profile using erosion-rate data obtained from a 1-keV boron implant into a germanium preamorphized silicon (001) surface.

Item Type: Journal Article
Subjects: Q Science > QC Physics
Journal or Publication Title: PHYSICAL REVIEW B
Publisher: AMERICAN PHYSICAL SOC
ISSN: 1098-0121
Official Date: 15 March 2002
Dates:
DateEvent
15 March 2002UNSPECIFIED
Volume: 65
Number: 11
Number of Pages: 4
Page Range: -
DOI: 10.1103/PhysRevB.65.113412
Publication Status: Published

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