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Establishing an accurate depth-scale calibration in the top few nanometers of an ultrashallow implant profile
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UNSPECIFIED. (2002) Establishing an accurate depth-scale calibration in the top few nanometers of an ultrashallow implant profile. PHYSICAL REVIEW B, 65 (11). -. ISSN 1098-0121
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Official URL: http://dx.doi.org/10.1103/PhysRevB.65.113412
Abstract
A method to accurately determine the sputter yield of the matrix from the earliest stages of a sputter profile is described. Using the technique of medium-energy ion-scattering spectroscopy, this method provides data that enable a depth scale to be established from subnanometer depths onward. It may be adapted to samples containing a thin amorphous surface layer (e.g., a preamorphized shallow implant) or to crystalline surfaces containing a heavy-element marker layer. In this Brief Report we have used this method to interpret the near-surface profile using erosion-rate data obtained from a 1-keV boron implant into a germanium preamorphized silicon (001) surface.
| Item Type: | Journal Article |
|---|---|
| Subjects: | Q Science > QC Physics |
| Journal or Publication Title: | PHYSICAL REVIEW B |
| Publisher: | AMERICAN PHYSICAL SOC |
| ISSN: | 1098-0121 |
| Date: | 15 March 2002 |
| Volume: | 65 |
| Number: | 11 |
| Number of Pages: | 4 |
| Page Range: | - |
| Identification Number: | 10.1103/PhysRevB.65.113412 |
| Publication Status: | Published |
| URI: | http://wrap.warwick.ac.uk/id/eprint/11124 |
Data sourced from Thomson Reuters' Web of Knowledge
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