HREELS and photoemission study of GaSb(100)-(1 x 3) surfaces prepared by optimal atomic hydrogen cleaning
UNSPECIFIED. (2002) HREELS and photoemission study of GaSb(100)-(1 x 3) surfaces prepared by optimal atomic hydrogen cleaning. Surface Science, 499 (2-3). pp. 251-260. ISSN 0039-6028Full text not available from this repository.
High-resolution electron-energy-loss spectroscopy (HREELS) and synchrotron-radiation photoemission spectroscopy (SRPES) have been used to study the Sb-stabilised GaSb(1 0 0)-(1 x 3) surface prepared by a two-stage low-temperature atomic hydrogen cleaning (AHC) procedure. The use of a maximum annealing temperature of 300 degreesC avoids the degradation of surface stoichiometry associated with higher annealing temperatures. After AHC at a sample temperature of 100 degreesC, SRPES results show that all Sb oxides have been removed and only a small amount of Ga oxide remains. Further AHC treatment at 300 degreesC results in a clean surface with a sharp (1 x 3) low energy electron diffraction pattern. SRPES results indicate that the surface stoichiometry is identical to that previously found for GaSb(1 0 0)(1 x 3) prepared by in situ molecular beam epitaxy. Electron energy-dependent HREEL spectra exhibit a coupled plasmon-phonon mode which has been used to study the electronic structure of the near-surface region. Semi-classical dielectric theory simulations of the HREEL spectra of the clean GaSb(1 0 0)-(1 x 3) surface indicate no detectable electronic damage or dopant passivation results from the AHC treatment. Valence band SRPES indicates that the surface Fermi level is close to the valence band maximum, suggesting the presence of an inversion layer at the surface. (C) 2002 Elsevier Science B.V. All rights reserved.
|Item Type:||Journal Article|
|Subjects:||Q Science > QD Chemistry
Q Science > QC Physics
|Journal or Publication Title:||Surface Science|
|Publisher:||ELSEVIER SCIENCE BV|
|Official Date:||1 March 2002|
|Number of Pages:||10|
|Page Range:||pp. 251-260|
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