UNSPECIFIED (2002) Transconductance, carrier mobility and 1/f noise in Si/Si0.64Ge0.36/Si pMOSFETs. In: Spring Meeting of the European-Materials-Research-Society, JUN 05-08, 2001, STRASBOURG, FRANCE.

Full text not available from this repository.

Abstract

We briefly review recent work on enhancements in transconductance. maximum voltage gain. carrier mobility and velocity overshoot in Si/S0.64Ge0.36/Si p-channel metal-oxide-semiconductor devices and then discuss the superior 1/f noise properties in more detail. The results indicate the growth and processing challenges which must be met in order to improve device performance. (C) 2002 Elsevier Science B.V. All rights reserved.

Item Type:	Conference Item (UNSPECIFIED)
Subjects:	T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics
Journal or Publication Title:	MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
Publisher:	ELSEVIER SCIENCE SA
ISSN:	0921-5107
Date:	14 February 2002
Volume:	89
Number:	1-3
Number of Pages:	5
Page Range:	pp. 444-448
Publication Status:	Published
Title of Event:	Spring Meeting of the European-Materials-Research-Society
Location of Event:	STRASBOURG, FRANCE
Date(s) of Event:	JUN 05-08, 2001
URI:	http://wrap.warwick.ac.uk/id/eprint/11215

Data sourced from Thomson Reuters' Web of Knowledge

Request changes to a record

Actions (login required)

View Item