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Impact of the gate oxide reliability of SiC MOSFETs on the junction temperature estimation using temperature sensitive electrical parameters
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Gonzalez, Jose Ortiz and Alatise, Olayiwola M. (2018) Impact of the gate oxide reliability of SiC MOSFETs on the junction temperature estimation using temperature sensitive electrical parameters. In: 2018 IEEE Energy Conversion Congress and Exposition (ECCE), Portland, OR, USA, 23-27 Sep 2018 pp. 837-844. ISBN 9781479973125. ISSN 2329-3748. doi:10.1109/ECCE.2018.8557810
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WRAP-impact-gateoxide-reliability-SiC-MOSFETs-Gonzalez-2018.pdf - Accepted Version - Requires a PDF viewer. Download (2296Kb) | Preview |
Official URL: http://dx.doi.org/10.1109/ECCE.2018.8557810
Abstract
Bias temperature instability (BTI) is more problematic in SiC power MOSFETs due to the occurrence of higher interface state traps and fixed oxide traps compared to traditional silicon MOS interfaces where there are no carbon atoms degrading the atomically smooth Si/SiO2 interface. The use of temperature sensitive electrical parameters (TSEPs) for measuring the junction temperature and enabling health monitoring based on junction temperature identification is a promising technique for increasing the reliability of power devices, however in the light of increased BTI in SiC devices, this must be carefully assessed. This paper evaluates how BTI of SiC power MOSFETs under high temperature gate bias stresses affects the electrical parameters used as TSEPs and its impact on condition monitoring.
| Item Type: | Conference Item (Paper) | ||||||
|---|---|---|---|---|---|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||||
| Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||
| Library of Congress Subject Headings (LCSH): | Metal oxide semiconductor field-effect transistors | ||||||
| Publisher: | IEEE | ||||||
| ISBN: | 9781479973125 | ||||||
| ISSN: | 2329-3748 | ||||||
| Book Title: | 2018 IEEE Energy Conversion Congress and Exposition (ECCE) | ||||||
| Official Date: | 6 December 2018 | ||||||
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| Page Range: | pp. 837-844 | ||||||
| DOI: | 10.1109/ECCE.2018.8557810 | ||||||
| Status: | Peer Reviewed | ||||||
| Publication Status: | Published | ||||||
| Reuse Statement (publisher, data, author rights): | © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | ||||||
| Access rights to Published version: | Restricted or Subscription Access | ||||||
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| Conference Paper Type: | Paper | ||||||
| Title of Event: | 2018 IEEE Energy Conversion Congress and Exposition (ECCE) | ||||||
| Type of Event: | Conference | ||||||
| Location of Event: | Portland, OR, USA | ||||||
| Date(s) of Event: | 23-27 Sep 2018 |
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