UNSPECIFIED (2001) Ion-implantation and diffusion behaviour of boron in germanium. In: 21st International Conference on Defects in Semiconductors, JUL 16-20, 2001, GIESSEN, GERMANY.

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Abstract

Results are presented of implantation and diffusion study of boron (B) in germanium (Ge). B implantation was carried out in Ge with different energies and to different doses. High-resolution secondary ion mass spectroscopy was used to obtain concentration profiles after furnace annealing. The as-implanted profiles show a long tail possibly due to enhanced diffusion. A limited diffusion has been observed after furnace annealing. Using T-SUPREM, diffusivity value of 1.5(+/-0.3) x 10(-16) cm(2)/s at 850degreesC has been extracted. This value is two orders of magnitude lower than previously reported values. The results question the change in diffusion mechanism of B diffusion in Si-Ge alloys from low Ge levels to high Ge levels. (C) 2001 Elsevier Science B.V. All rights reserved.

Item Type:	Conference Item (UNSPECIFIED)
Subjects:	Q Science > QC Physics
Journal or Publication Title:	PHYSICA B-CONDENSED MATTER
Publisher:	ELSEVIER SCIENCE BV
ISSN:	0921-4526
Date:	December 2001
Volume:	308
Number of Pages:	4
Page Range:	pp. 525-528
Publication Status:	Published
Title of Event:	21st International Conference on Defects in Semiconductors
Location of Event:	GIESSEN, GERMANY
Date(s) of Event:	JUL 16-20, 2001
URI:	http://wrap.warwick.ac.uk/id/eprint/11262

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