Ion-implantation and diffusion behaviour of boron in germanium
UNSPECIFIED (2001) Ion-implantation and diffusion behaviour of boron in germanium. In: 21st International Conference on Defects in Semiconductors, JUL 16-20, 2001, GIESSEN, GERMANY.Full text not available from this repository.
Results are presented of implantation and diffusion study of boron (B) in germanium (Ge). B implantation was carried out in Ge with different energies and to different doses. High-resolution secondary ion mass spectroscopy was used to obtain concentration profiles after furnace annealing. The as-implanted profiles show a long tail possibly due to enhanced diffusion. A limited diffusion has been observed after furnace annealing. Using T-SUPREM, diffusivity value of 1.5(+/-0.3) x 10(-16) cm(2)/s at 850degreesC has been extracted. This value is two orders of magnitude lower than previously reported values. The results question the change in diffusion mechanism of B diffusion in Si-Ge alloys from low Ge levels to high Ge levels. (C) 2001 Elsevier Science B.V. All rights reserved.
|Item Type:||Conference Item (UNSPECIFIED)|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||PHYSICA B-CONDENSED MATTER|
|Publisher:||ELSEVIER SCIENCE BV|
|Number of Pages:||4|
|Page Range:||pp. 525-528|
|Title of Event:||21st International Conference on Defects in Semiconductors|
|Location of Event:||GIESSEN, GERMANY|
|Date(s) of Event:||JUL 16-20, 2001|
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