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A NIXSW structural investigation of the low temperature silyl phase formed by SiH4 reaction with Cu(111)

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UNSPECIFIED (2002) A NIXSW structural investigation of the low temperature silyl phase formed by SiH4 reaction with Cu(111). CHEMICAL PHYSICS LETTERS, 351 (3-4). pp. 208-212. ISSN 0009-2614.

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Abstract

The structure of the Cu(111)-(3x3)-SiHx surface formed by reaction of silane (SiH4) with Cu(111) at 140 K, has been determined using normal incidence X-ray standing wave (NIXSW) analysis. The (3 x 3) phase, thought to comprise a mixture of SiH3 (2/9 ML) and SiH or Si species (1/9 ML), has all the surface silicon atoms located in hcp 3-fold hollow sites at a distance of 1.98+/-0.04 Angstrom from the surface copper scatterer planes. (C) 2002 Published by Elsevier Science B.V.

Item Type: Journal Article
Subjects: Q Science > QD Chemistry
Q Science > QC Physics
Journal or Publication Title: CHEMICAL PHYSICS LETTERS
Publisher: ELSEVIER SCIENCE BV
ISSN: 0009-2614
Official Date: 10 January 2002
Dates:
DateEvent
10 January 2002UNSPECIFIED
Volume: 351
Number: 3-4
Number of Pages: 5
Page Range: pp. 208-212
Publication Status: Published

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