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A NIXSW structural investigation of the low temperature silyl phase formed by SiH4 reaction with Cu(111)
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UNSPECIFIED (2002) A NIXSW structural investigation of the low temperature silyl phase formed by SiH4 reaction with Cu(111). CHEMICAL PHYSICS LETTERS, 351 (3-4). pp. 208-212. ISSN 0009-2614.
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Abstract
The structure of the Cu(111)-(3x3)-SiHx surface formed by reaction of silane (SiH4) with Cu(111) at 140 K, has been determined using normal incidence X-ray standing wave (NIXSW) analysis. The (3 x 3) phase, thought to comprise a mixture of SiH3 (2/9 ML) and SiH or Si species (1/9 ML), has all the surface silicon atoms located in hcp 3-fold hollow sites at a distance of 1.98+/-0.04 Angstrom from the surface copper scatterer planes. (C) 2002 Published by Elsevier Science B.V.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Subjects: | Q Science > QD Chemistry Q Science > QC Physics |
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| Journal or Publication Title: | CHEMICAL PHYSICS LETTERS | ||||
| Publisher: | ELSEVIER SCIENCE BV | ||||
| ISSN: | 0009-2614 | ||||
| Official Date: | 10 January 2002 | ||||
| Dates: |
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| Volume: | 351 | ||||
| Number: | 3-4 | ||||
| Number of Pages: | 5 | ||||
| Page Range: | pp. 208-212 | ||||
| Publication Status: | Published |
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