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Nano-porous TiN thin films deposited by reactive sputtering method
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UNSPECIFIED (2001) Nano-porous TiN thin films deposited by reactive sputtering method. In: Spring Meeting of the European-Materials-Research-Society, STRASBOURG, FRANCE, MAY 29-JUN 02, 2000. Published in: INTERNATIONAL JOURNAL OF INORGANIC MATERIALS, 3 (8). pp. 1193-1196. ISSN 1466-6049.
Full text not available from this repository, contact author.Abstract
Nano-porous TiN thin films deposited by a reactive sputtering process are reported. The effect of deposition parameters including sputtering power density, nitrogen partial pressure and deposition time on the thin film growth has been investigated. Crystallisation behaviour, chemical composition and microstructure of the deposited films were also investigated using X-ray diffraction, EDX and scanning electron microscopy. A test cell of Na(I)/beta" alumina/TiN was set up and tested at the temperature range of 600-800 degreesC, in order to investigate the cell power density and the interfacial electrical property between the electrolyte and TiN electrode. The maximum power density of 0.20 W cm(-2) could be achieved with a large electrode area of 30 cm(2) at 800 degreesC. The effect of microstructure of the nanometer size thin film electrodes on the conductive property has been studied and discussed. (C) 2001 Elsevier Science Ltd. All rights reserved.
| Item Type: | Conference Item (UNSPECIFIED) | ||||
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| Subjects: | Q Science > QD Chemistry T Technology > TA Engineering (General). Civil engineering (General) |
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| Journal or Publication Title: | INTERNATIONAL JOURNAL OF INORGANIC MATERIALS | ||||
| Publisher: | ELSEVIER SCI LTD | ||||
| ISSN: | 1466-6049 | ||||
| Official Date: | December 2001 | ||||
| Dates: |
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| Volume: | 3 | ||||
| Number: | 8 | ||||
| Number of Pages: | 4 | ||||
| Page Range: | pp. 1193-1196 | ||||
| Publication Status: | Published | ||||
| Title of Event: | Spring Meeting of the European-Materials-Research-Society | ||||
| Location of Event: | STRASBOURG, FRANCE | ||||
| Date(s) of Event: | MAY 29-JUN 02, 2000 |
Data sourced from Thomson Reuters' Web of Knowledge
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