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Mid-infrared InAs/InAsSb superlattice nBn photodetector monolithically integrated onto silicon
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Delli, Evangelia, Letka, Veronica, Hodgson, Peter D., Repiso, Eva, Hayton, Jonathan P., Craig, Adam P., Lu, Qi, Beanland, R., Krier, Anthony, Marshall, Andrew R. J. and Carrington, Peter J. (2019) Mid-infrared InAs/InAsSb superlattice nBn photodetector monolithically integrated onto silicon. ACS Photonics, 6 (2). pp. 538-544. doi:10.1021/acsphotonics.8b01550
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WRAP-mid-infrared-InAsInAsSb-superlattice-nBn-photodetector-monolithically-integrated-silicon-Beanland-2019.pdf - Published Version - Requires a PDF viewer. Available under License Creative Commons Attribution 4.0. Download (3893Kb) | Preview |
Official URL: https://doi.org/10.1021/acsphotonics.8b01550
Abstract
Mid-infrared (MIR) silicon photonics holds the potential for realizing next generation ultracompact spectroscopic systems for applications in gas sensing, defense, and medical diagnostics. The direct epitaxial growth of antimonide-based compound semiconductors on silicon provides a promising approach for extending the wavelength of silicon photonics to the longer infrared range. This paper reports on the fabrication of a high performance MIR photodetector directly grown onto silicon by molecular beam epitaxy. The device exhibited an extended cutoff wavelength at ∼5.5 μm and a dark current density of 1.4 × 10–2 A/cm2 under 100 mV reverse bias at 200 K. A responsivity of 0.88 A/W and a specific detectivity in the order of 1.5 × 1010 Jones was measured at 200 K under 100 mV reverse bias operation. These results were achieved through the development of an innovative structure which incorporates a type-II InAs/InAsSb superlattice-based barrier nBn photodetector grown on a GaSb-on-silicon buffer layer. The difficulties in growing GaSb directly on silicon were overcome using a novel growth procedure consisting of an efficient AlSb interfacial misfit array, a two-step growth temperature procedure and dislocation filters resulting in a low defect density, antiphase domain free GaSb epitaxial layer on silicon. This work demonstrates that complex superlattice-based MIR photodetectors can be directly integrated onto a Si platform, which provides a pathway toward the realization of new, high performance, large area focal plane arrays and mid-infrared integrated photonic circuits.
| Item Type: | Journal Article | |||||||||||||||
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| Subjects: | Q Science > QC Physics | |||||||||||||||
| Divisions: | Faculty of Science > Physics | |||||||||||||||
| SWORD Depositor: | Library Publications Router | |||||||||||||||
| Library of Congress Subject Headings (LCSH): | Superlattices as materials, Photonics | |||||||||||||||
| Journal or Publication Title: | ACS Photonics | |||||||||||||||
| Publisher: | American Chemical Society (ACS) | |||||||||||||||
| ISSN: | 2330-4022 | |||||||||||||||
| Official Date: | 16 January 2019 | |||||||||||||||
| Dates: |
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| Date of first compliant deposit: | 5 April 2019 | |||||||||||||||
| Volume: | 6 | |||||||||||||||
| Number: | 2 | |||||||||||||||
| Page Range: | pp. 538-544 | |||||||||||||||
| DOI: | 10.1021/acsphotonics.8b01550 | |||||||||||||||
| Status: | Peer Reviewed | |||||||||||||||
| Publication Status: | Published | |||||||||||||||
| Access rights to Published version: | Open Access | |||||||||||||||
| RIOXX Funder/Project Grant: |
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