The Library
Mid-infrared InAs/InAsSb superlattice nBn photodetector monolithically integrated onto silicon
Tools
Tools
Tools
Delli, Evangelia, Letka, Veronica, Hodgson, Peter D., Repiso, Eva, Hayton, Jonathan P., Craig, Adam P., Lu, Qi, Beanland, R., Krier, Anthony, Marshall, Andrew R. J. and Carrington, Peter J. (2019) Mid-infrared InAs/InAsSb superlattice nBn photodetector monolithically integrated onto silicon. ACS Photonics, 6 (2). pp. 538-544. doi:10.1021/acsphotonics.8b01550
|
PDF
WRAP-mid-infrared-InAsInAsSb-superlattice-nBn-photodetector-monolithically-integrated-silicon-Beanland-2019.pdf - Published Version - Requires a PDF viewer. Available under License Creative Commons Attribution 4.0. Download (3893Kb) | Preview |
Official URL: https://doi.org/10.1021/acsphotonics.8b01550
Abstract
Mid-infrared (MIR) silicon photonics holds the potential for realizing next generation ultracompact spectroscopic systems for applications in gas sensing, defense, and medical diagnostics. The direct epitaxial growth of antimonide-based compound semiconductors on silicon provides a promising approach for extending the wavelength of silicon photonics to the longer infrared range. This paper reports on the fabrication of a high performance MIR photodetector directly grown onto silicon by molecular beam epitaxy. The device exhibited an extended cutoff wavelength at ∼5.5 μm and a dark current density of 1.4 × 10–2 A/cm2 under 100 mV reverse bias at 200 K. A responsivity of 0.88 A/W and a specific detectivity in the order of 1.5 × 1010 Jones was measured at 200 K under 100 mV reverse bias operation. These results were achieved through the development of an innovative structure which incorporates a type-II InAs/InAsSb superlattice-based barrier nBn photodetector grown on a GaSb-on-silicon buffer layer. The difficulties in growing GaSb directly on silicon were overcome using a novel growth procedure consisting of an efficient AlSb interfacial misfit array, a two-step growth temperature procedure and dislocation filters resulting in a low defect density, antiphase domain free GaSb epitaxial layer on silicon. This work demonstrates that complex superlattice-based MIR photodetectors can be directly integrated onto a Si platform, which provides a pathway toward the realization of new, high performance, large area focal plane arrays and mid-infrared integrated photonic circuits.
| Item Type: | Journal Article | |||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Subjects: | Q Science > QC Physics | |||||||||||||||
| Divisions: | Faculty of Science > Physics | |||||||||||||||
| SWORD Depositor: | Library Publications Router | |||||||||||||||
| Library of Congress Subject Headings (LCSH): | Superlattices as materials, Photonics | |||||||||||||||
| Journal or Publication Title: | ACS Photonics | |||||||||||||||
| Publisher: | American Chemical Society (ACS) | |||||||||||||||
| ISSN: | 2330-4022 | |||||||||||||||
| Official Date: | 16 January 2019 | |||||||||||||||
| Dates: |
|
|||||||||||||||
| Volume: | 6 | |||||||||||||||
| Number: | 2 | |||||||||||||||
| Page Range: | pp. 538-544 | |||||||||||||||
| DOI: | 10.1021/acsphotonics.8b01550 | |||||||||||||||
| Status: | Peer Reviewed | |||||||||||||||
| Publication Status: | Published | |||||||||||||||
| Access rights to Published version: | Open Access | |||||||||||||||
| RIOXX Funder/Project Grant: |
|
Request changes or add full text files to a record
Repository staff actions (login required)
 |
View Item |
Downloads
Downloads per month over past year
